P

Inventor

KUNG TA-YUAN

TW15 patents

Patents

15 patents
US9831340B2Nov 28, 2017

Semiconductor structure and associated fabricating method

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations83
US12237323B2Feb 25, 2025

Semiconductor device having improved electrostatic discharge protection

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10985256B2Apr 20, 2021

Semiconductor device and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10686047B2Jun 16, 2020

Semiconductor device and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US12211935B2Jan 28, 2025

Semiconductor structure and associated fabricating method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12176407B2Dec 24, 2024

Method of forming a transistor device with a gate structure having a pair of recess regions and a resistive protection layer within

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11538914B2Dec 27, 2022

Semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11508845B2Nov 22, 2022

Semiconductor structure and associated fabricating method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11916060B2Feb 27, 2024

Semiconductor device having improved electrostatic discharge protection

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11715734B2Aug 1, 2023

Semiconductor device having improved electrostatic discharge protection

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12557335B2Feb 17, 2026

Transistor structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11444169B2Sep 13, 2022

Transistor device with a gate structure having recesses overlying an interface between isolation and device regions

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10847652B2Nov 24, 2020

Semiconductor structure and associated fabricating method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US11393809B2Jul 19, 2022

Semiconductor device having improved electrostatic discharge protection

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US10164037B2Dec 25, 2018

Semiconductor device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations39