Inventor

MAUDER ANTON

DE303 patents

⚠️ This page may combine multiple inventors who share the name “MAUDER ANTON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MAUDER ANTON

INFINEON TECHNOLOGIES AG

Compensation component and method for fabricating the compensation component

High blocking semiconductor component comprising a drift section

Semiconductor device and fabrication method suitable therefor

Method for production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone

Metal semiconductor contact, semiconductor component, integrated circuit arrangement and method

Power semiconductor component for high reverse voltages

Power semiconductor transistor having fully depleted channel region

Power semiconductor device having fully depleted channel region

Power semiconductor transistor having fully depleted channel region

Dual gate switch device

Semiconductor device and fabrication method

Soft switching semiconductor component with high robustness and low switching losses

Capacitor structure in trench structures of semiconductor devices and semiconductor devices comprising capacitor structures of this type and methods for fabricating the same

Component arrangement including a power semiconductor component having a drift control zone

IGBT device and related device having robustness under extreme conditions

Semiconductor diode and IGBT

High-voltage diode

Vertical power semiconductor component

Method for producing a stop zone in a semiconductor body and semiconductor component having a stop zone

INFINEON TECHNOLOGIES AUSTRIA

Method for producing an integrated circuit including a semiconductor

Method for fabricating a semiconductor component

Superjunction device and semiconductor structure comprising the same

Charge compensation semiconductor devices

High-voltage semiconductor switch and method for switching high voltages

Method for producing a semiconductor including a foreign material layer

Semiconductor device with a semiconductor body and method for producing it

Semiconductor component having a drift zone and a drift control zone

Semiconductor component comprising a drift zone and a drift control zone

Power semiconductor component with charge compensation structure and method for the fabrication thereof

Semiconductor device and fabrication method

Semiconductor component arrangement having a component with a drift zone and a drift control zone

MAUDER ANTON

Lateral transistor on polymer

Semiconductor device with trench structures including a recombination structure and a fill structure

Current measurement in a power transistor

Power semiconductor device and a method for forming a semiconductor device

Semiconductor device with edge termination structure

Semiconductor device with improved on-resistance

Component arragement with an optimized assembly capability

Solid-state bidirectional switch having a first and a second power-FET

SCHULZE HANS-JOACHIM

Semiconductor device including an edge area and method of manufacturing a semiconductor device

Method of manufacturing a semiconductor device including grinding from a back surface and semiconductor device

Power transistor device vertical integration

WEYERS JOACHIM

Semiconductor device including a diode arranged in a trench

Semiconductor component and method for producing a semiconductor component

SEDLMAIER STEFAN

Stress-reduced field-effect semiconductor device and method for forming therefor

BERGER RUDOLF

Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core

INFINEON TECHNOLOGIES AUSTRIA AG

High voltage transistor operable with a high gate voltage

HIRLER FRANZ

Depletion MOS transistor and charging arrangement

PFIRSCH FRANK

Semiconductor component with a drift region and a drift control region

PFIRSCH FRANK DIETER

Power semiconductor component with a low on-state resistance