Inventor

PFIRSCH FRANK DIETER

DE44 patents

⚠️ This page may combine multiple inventors who share the name “PFIRSCH FRANK DIETER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PFIRSCH FRANK DIETER

INFINEON TECHNOLOGIES AG

Increasing the doping efficiency during proton irradiation

Semiconductor device

Power semiconductor device having fully depleted channel regions

Bipolar transistor with superjunction structure

Semiconductor device with variable resistive element

Semiconductor device having an edge termination region comprising a first edge termination region of a second conductivity type adjacent to a second edge termination region of a first conductivity type

Power semiconductor device with dV/dt controllability and cross-trench arrangement

Power semiconductor device having a gate dielectric stack that includes a ferroelectric insulator

Power semiconductor switch having a cross-trench structure

Power semiconductor device having a cross-trench arrangement

Semiconductor device having contact layers and manufacturing method

Semiconductor device including first and second contact layers and manufacturing method

RC IGBT with an IGBT section and a diode section

Power semiconductor device

Power electronic arrangement

Power semiconductor device having fully depleted channel regions

Bipolar transistor with superjunction structure

Power semiconductor device

Semiconductor device with channelstopper and method for producing the same

Power semiconductor device

Insulated gate semiconductor device with soft switching behavior

Increasing the doping efficiency during proton irradiation

Vertical power semiconductor device and manufacturing method

Power semiconductor device and method of processing a power semiconductor device

Semiconductor device with a reduced band gap zone

Power semiconductor device

Semiconductor die, semiconductor device and IGBT module

Semiconductor devices and methods for forming semiconductor devices

Semiconductor device with sensor potential in the active region

Reverse-conducting IGBT

Power semiconductor device

Power semiconductor device

Insulated gate bipolar transistor

INFINEON TECHNOLOGIES AUSTRIA AG

Charge-compensation semiconductor device and a manufacturing method therefor

RC IGBT and method of producing an RC IGBT

Power semiconductor device and method

Semiconductor component and integrated circuit

Rc igbt

Semiconductor device

High voltage termination structure of a power semiconductor device

PFIRSCH FRANK DIETER

Power semiconductor component with a low on-state resistance

Semiconductor component with high breakthrough tension and low forward resistance

INFINEON TECHNOLOGIES AUSTRIA

Semiconductor device having means for diverting short circuit current arranged in trench and method for producing same

HIRLER FRANZ

Semiconductor device and method for producing a semiconductor device