Inventor
LEE KAI-LIN
TW33 patents
⚠️ This page may combine multiple inventors who share the name “LEE KAI-LIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
32 patentsUS11239327B2Feb 1, 2022
HEMT and method of adjusting electron density of 2DEG
UNITED MICROELECTRONICS CORP18 citations85
US11088271B2Aug 10, 2021
High electron mobility transistor and method for fabricating the same
UNITED MICROELECTRONICS CORP6 citations84
US9450094B1Sep 20, 2016
Semiconductor process and fin-shaped field effect transistor
UNITED MICROELECTRONICS CORP12 citations84
US11749748B2Sep 5, 2023
High electron mobility transistor and method for fabricating the same
UNITED MICROELECTRONICS CORP2 citations73
US10629728B1Apr 21, 2020
Semiconductor device and fabrication method thereof
UNITED MICROELECTRONICS CORP3 citations73
US10566244B2Feb 18, 2020
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP3 citations73
US9640661B1May 2, 2017
FinFET having a fin and a V-shaped epitaxial layer formed on the top surface of the fin and method for fabricating the same
UNITED MICROELECTRONICS CORP2 citations73
US11380777B2Jul 5, 2022
Method for forming a high-voltage metal-oxide-semiconductor transistor device
UNITED MICROELECTRONICS CORP2 citations72
US10103265B1Oct 16, 2018
Complementary metal oxide semiconductor device and method of forming the same
UNITED MICROELECTRONICS CORP5 citations67
US12471304B2Nov 11, 2025
High electron mobility transistor (HEMT) device for increasing the Schottky diode current and method of forming the same
UNITED MICROELECTRONICS CORP0 citations62
US12396195B2Aug 19, 2025
High electron mobility transistor device and manufacturing method thereof
UNITED MICROELECTRONICS CORP1 citations62
US12132095B2Oct 29, 2024
Method of fabricating metal gate transistor
UNITED MICROELECTRONICS CORP0 citations62
US12107157B2Oct 1, 2024
High electron mobility transistor and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations62
US11715784B2Aug 1, 2023
Method for forming a high-voltage metal-oxide-semiconductor transistor device
UNITED MICROELECTRONICS CORP0 citations62
US11652154B2May 16, 2023
Method of fabricating metal gate transistor
UNITED MICROELECTRONICS CORP0 citations62
US11610973B2Mar 21, 2023
High voltage transistor structure and method of fabricating the same
UNITED MICROELECTRONICS CORP0 citations62
US11527652B2Dec 13, 2022
Semiconductor process
UNITED MICROELECTRONICS CORP0 citations62
US11251279B2Feb 15, 2022
High voltage transistor structure and method of fabricating the same
UNITED MICROELECTRONICS CORP0 citations62
US11127838B2Sep 21, 2021
Method of fabricating metal gate transistor
UNITED MICROELECTRONICS CORP0 citations62
US11011430B2May 18, 2021
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations62
US12396201B2Aug 19, 2025
HEMT and method of fabricating the same
UNITED MICROELECTRONICS CORP0 citations60
US12289900B2Apr 29, 2025
HEMT and method of fabricating the same
UNITED MICROELECTRONICS CORP0 citations60
US12107121B2Oct 1, 2024
Method for forming air gap between gate dielectric layer and spacer
UNITED MICROELECTRONICS CORP0 citations60
US12266723B2Apr 1, 2025
Semiconductor device and method for forming the same
UNITED MICROELECTRONICS CORP0 citations59
US11955541B2Apr 9, 2024
Semiconductor device and method for forming the same
UNITED MICROELECTRONICS CORP0 citations59
US10861974B2Dec 8, 2020
Semiconductor structure and process thereof
UNITED MICROELECTRONICS CORP0 citations52
US10756209B2Aug 25, 2020
Semiconductor device
UNITED MICROELECTRONICS CORP0 citations52
US10014406B2Jul 3, 2018
Semiconductor device and method of forming the same
UNITED MICROELECTRONICS CORP1 citations52
US12176403B2Dec 24, 2024
High electron mobility transistor device
UNITED MICROELECTRONICS CORP0 citations50
US11664450B2May 30, 2023
High voltage semiconductor device
UNITED MICROELECTRONICS CORP0 citations49
US10629734B2Apr 21, 2020
Fabricating method of fin structure with tensile stress and complementary FinFET structure
UNITED MICROELECTRONICS CORP0 citations45
US10229995B2Mar 12, 2019
Fabricating method of fin structure with tensile stress and complementary FinFET structure
UNITED MICROELECTRONICS CORP0 citations45