Inventor
CHANG CHIH-YU
TW81 patents
⚠️ This page may combine multiple inventors who share the name “CHANG CHIH-YU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
47 patentsUS11515332B2Nov 29, 2022
Ferroelectric memory device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations86
US11031508B2Jun 8, 2021
Semiconductor device with treated interfacial layer on silicon germanium
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10629749B2Apr 21, 2020
Method of treating interfacial layer on silicon germanium
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11862219B2Jan 2, 2024
Memory cell and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations75
US11729986B2Aug 15, 2023
Ferroelectric memory device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations75
US11729997B2Aug 15, 2023
3D stackable memory and methods of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US11563079B2Jan 24, 2023
Metal insulator metal (MIM) structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US11335552B2May 17, 2022
Structure and formation method of semiconductor device with oxide semiconductor channel
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations75
US12176433B2Dec 24, 2024
Polarization enhancement structure for enlarging memory window
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11903189B2Feb 13, 2024
Three-dimensional memory and fabricating method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11855128B2Dec 26, 2023
Metal insulator metal (MIM) structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11848370B2Dec 19, 2023
Semiconductor device and manufacturing method for the semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11688812B2Jun 27, 2023
Semiconductor device with treated interfacial layer on silicon germanium
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11568912B2Jan 31, 2023
Memory cell and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11508753B2Nov 22, 2022
Embedded ferroelectric FinFET memory device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11469324B2Oct 11, 2022
Semiconductor device with negative capacitance structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11349008B2May 31, 2022
Negative capacitance transistor having a multilayer ferroelectric structure or a ferroelectric layer with a gradient doping profile
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11309398B2Apr 19, 2022
Semiconductor device and manufacturing method for the semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11282945B2Mar 22, 2022
Negative-capacitance field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10861968B1Dec 8, 2020
Semiconductor device with negative capacitance structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US12505871B2Dec 23, 2025
Memory cell and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12363894B2Jul 15, 2025
Method for fabricating three-dimensional memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12317505B2May 27, 2025
Memory array including epitaxial source lines and bit lines
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12256550B2Mar 18, 2025
Three-dimensional memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12225731B2Feb 11, 2025
Memory array contact structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12193241B2Jan 7, 2025
Ferroelectric memory device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12150311B2Nov 19, 2024
Embedded ferroelectric FinFET memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12150308B2Nov 19, 2024
Semiconductor chip
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12051750B2Jul 30, 2024
Memory array gate structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12040387B2Jul 16, 2024
Negative-capacitance field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11997854B2May 28, 2024
Semiconductor structure and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11991888B2May 21, 2024
3D stackable memory and methods of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11974441B2Apr 30, 2024
Memory array including epitaxial source lines and bit lines
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11955548B2Apr 9, 2024
Two-dimensional (2D) material for oxide semiconductor (OS) ferroelectric field-effect transistor (FeFET) device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11950427B2Apr 2, 2024
Ferroelectric memory device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11901450B2Feb 13, 2024
Ferroelectric structure for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11855205B2Dec 26, 2023
Semiconductor device with negative capacitance structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11832450B2Nov 28, 2023
Embedded ferroelectric FinFET memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11784235B2Oct 10, 2023
Negative capacitance transistor having a multilayer ferroelectric structure or a ferroelectric layer with a gradient doping profile
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11764292B2Sep 19, 2023
Negative-capacitance field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11716856B2Aug 1, 2023
Three-dimensional memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11695073B2Jul 4, 2023
Memory array gate structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11653500B2May 16, 2023
Memory array contact structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11522046B2Dec 6, 2022
Memory device and method of fabricating the memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11342343B2May 24, 2022
Semiconductor structure and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11107886B2Aug 31, 2021
Memory device and method of fabricating the memory device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11069807B2Jul 20, 2021
Ferroelectric structure for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
WU HUNG-WEI
2 patentsWU HUNG WEI
1 patentShowing the top 50 of 81 patents by PatentIndex Score.