Inventor
SCHUEHRER HOLGER
DE16 patents
⚠️ This page may combine multiple inventors who share the name “SCHUEHRER HOLGER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
6 patentsUS7259091B2Aug 21, 2007
Technique for forming a passivation layer prior to depositing a barrier layer in a copper metallization layer
ADVANCED MICRO DEVICES INC268 citations98
US7396718B2Jul 8, 2008
Technique for creating different mechanical strain in different channel regions by forming an etch stop layer stack having differently modified intrinsic stress
ADVANCED MICRO DEVICES INC29 citations92
US7491555B2Feb 17, 2009
Method and semiconductor structure for monitoring the fabrication of interconnect structures and contacts in a semiconductor device
ADVANCED MICRO DEVICES INC17 citations84
US7410885B2Aug 12, 2008
Method of reducing contamination by removing an interlayer dielectric from the substrate edge
ADVANCED MICRO DEVICES INC12 citations82
US7169664B2Jan 30, 2007
Method of reducing wafer contamination by removing under-metal layers at the wafer edge
ADVANCED MICRO DEVICES INC3 citations62
US7820536B2Oct 26, 2010
Method for removing a passivation layer prior to depositing a barrier layer in a copper metallization layer
ADVANCED MICRO DEVICES INC3 citations61
GLOBALFOUNDRIES INC
5 patentsUS8384161B2Feb 26, 2013
Contact optimization for enhancing stress transfer in closely spaced transistors
GLOBALFOUNDRIES INC3 citations63
US7638424B2Dec 29, 2009
Technique for non-destructive metal delamination monitoring in semiconductor devices
GLOBALFOUNDRIES INC3 citations62
US7781343B2Aug 24, 2010
Semiconductor substrate having a protection layer at the substrate back side
GLOBALFOUNDRIES INC6 citations61
US7763476B2Jul 27, 2010
Test structure for determining characteristics of semiconductor alloys in SOI transistors by x-ray diffraction
GLOBALFOUNDRIES INC0 citations52
US8039400B2Oct 18, 2011
Reducing contamination of semiconductor substrates during BEOL processing by performing a deposition/etch cycle during barrier deposition
GLOBALFOUNDRIES INC1 citations51
RICHTER RALF
3 patentsUS8951907B2Feb 10, 2015
Semiconductor devices having through-contacts and related fabrication methods
RICHTER RALF7 citations84
US8426312B2Apr 23, 2013
Method of reducing contamination by providing an etch stop layer at the substrate edge
RICHTER RALF5 citations72
US8129276B2Mar 6, 2012
Void sealing in a dielectric material of a contact level of a semiconductor device comprising closely spaced transistors
RICHTER RALF3 citations62