Inventor

HONG GARY

TW219 patents

⚠️ This page may combine multiple inventors who share the name “HONG GARY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HONG GARY

UNITED MICROELECTRONICS CORP

ROM device having shaped gate electrodes and corresponding code implants

Split-gate flash memory cell

Process for high density flash EPROM cell

Process for high density split-gate memory cell for flash or EPROM

Method of making a bottom gate mask ROM device

Method for forming a cantilever beam model micro-electromechanical system

Device for preventing antenna effect on circuit

Method for manufacturing shallow trench isolation structure including a dual trench

Process for fabricating a stacked capacitor

Method of forming isolation regions in a MOS transistor device

Process for creating high density integrated circuits utilizing double coating photoresist mask

Structure and process of manufacture of split gate flash memory cell

Process for fabricating MOS transistors having full-overlap lightly-doped drain structure

Method for fabricating a self aligned mask ROM

MOSFET device structure three spaced-apart deep boron implanted channel regions aligned with gate electrode of NMOSFET device

Method of forming a MOS device having a localized anti-punchthrough region

Trench EEPROM with tunnel oxide in trench

Method for fabricating polycide gate MOSFET devices

Method for fabricating MOS device with reduced anti-punchthrough region

Method of manufacturing EEPROM memory device with a select gate

Method of making a split gate flash memory cell

Method of fabrication of MOSFET device with buried bit line

Method of making flash EEPROM memory cell

Method of making self-aligned MOSFET

Interconnection process with self-aligned via plug

Method of fabricating a flash memory cell

Method for fabricating a field effect transistor with a self-aligned anti-punchthrough implant channel

Multilayer polysilicon gate self-align process for VLSI CMOS device

Vertical two-transistor flash memory

Method of fabricating flash memory

Flash memory having separate data programming and erasing terminals

Method for manufacturing DRAM capacitor

Method of fabricating a flash memory

Process of fabricating NAND-structure flash EEPROM using liquid phase deposition

Silicon-rich tunnel oxide formed by oxygen implantation for flash EEPROM

High density flash EPROM

Split gate memory cell with vertical floating gate

Process for fabricating flash memory devices

UNITED SEMICONDUCTOR CORP

Method for forming a stacked gate

Shallow trench isolation for semiconductor devices

Method for forming shallow trench isolation structure

Sub-micron MOSFET

Method for fabricating a flash memory

Method of manufacturing interconnect

Method of fabricating capacitor

Method for manufacturing shallow trench isolation structure

Method of fabricating split-gate source side injection flash memory array

Method of manufacturing a flash memory cell having a tunnel oxide with a long narrow top profile

DRAM process with a multilayer stack structure

Flash EEPROM device