Inventor
POST IAN R
US15 patents
⚠️ This page may combine multiple inventors who share the name “POST IAN R”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
11 patentsUS6368931B1Apr 9, 2002
Thin tensile layers in shallow trench isolation and method of making same
INTEL CORP283 citations99
US7226843B2Jun 5, 2007
Indium-boron dual halo MOSFET
INTEL CORP136 citations96
US7943468B2May 17, 2011
Penetrating implant for forming a semiconductor device
INTEL CORP20 citations92
US7541239B2Jun 2, 2009
Selective spacer formation on transistors of different classes on the same device
INTEL CORP26 citations92
US6693331B2Feb 17, 2004
Method of fabricating dual threshold voltage n-channel and p-channel MOSFETS with a single extra masked implant operation
INTEL CORP18 citations92
US6627506B2Sep 30, 2003
Thin tensile layers in shallow trench isolation and method of making same
INTEL CORP23 citations92
US6586294B1Jul 1, 2003
Method of fabricating MOSFET transistors with multiple threshold voltages by halo compensation and masks
INTEL CORP22 citations91
US6803285B2Oct 12, 2004
Method of fabricating dual threshold voltage n-channel and p-channel mosfets with a single extra masked implant operation
INTEL CORP11 citations73
US6979609B2Dec 27, 2005
Method of fabricating MOSFET transistors with multiple threshold voltages by halo compensation and masks
INTEL CORP5 citations72
US6717221B2Apr 6, 2004
Method of fabricating MOSFET transistors with multiple threshold voltages by halo compensation and masks
INTEL CORP4 citations72
US7560780B2Jul 14, 2009
Active region spacer for semiconductor devices and method to form the same
INTEL CORP4 citations63
CURELLO GIUSEPPE
4 patentsUS8426927B2Apr 23, 2013
Penetrating implant for forming a semiconductor device
CURELLO GIUSEPPE1 citations61
US8174060B2May 8, 2012
Selective spacer formation on transistors of different classes on the same device
CURELLO GIUSEPPE3 citations61
US8154067B2Apr 10, 2012
Selective spacer formation on transistors of different classes on the same device
CURELLO GIUSEPPE2 citations61
US8741720B2Jun 3, 2014
Penetrating implant for forming a semiconductor device
CURELLO GIUSEPPE0 citations51