Inventor
FONG YUPIN
US49 patents
⚠️ This page may combine multiple inventors who share the name “FONG YUPIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK CORP
40 patentsUS7602647B2Oct 13, 2009
System that compensates for coupling based on sensing a neighbor using coupling
SANDISK CORP416 citations99
US7443729B2Oct 28, 2008
System that compensates for coupling based on sensing a neighbor using coupling
SANDISK CORP96 citations99
US7139198B2Nov 21, 2006
Efficient verification for coarse/fine programming of non-volatile memory
SANDISK CORP153 citations99
US7068539B2Jun 27, 2006
Charge packet metering for coarse/fine programming of non-volatile memory
SANDISK CORP206 citations99
US7020026B2Mar 28, 2006
Bitline governed approach for program control of non-volatile memory
SANDISK CORP117 citations99
US7002843B2Feb 21, 2006
Variable current sinking for coarse/fine programming of non-volatile memory
SANDISK CORP180 citations99
US6898121B2May 24, 2005
Deep wordline trench to shield cross coupling between adjacent cells for scaled NAND
SANDISK CORP134 citations99
US6888758B1May 3, 2005
Programming non-volatile memory
SANDISK CORP337 citations99
US6870768B2Mar 22, 2005
Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells
SANDISK CORP201 citations99
US6807095B2Oct 19, 2004
Multi-state nonvolatile memory capable of reducing effects of coupling between storage elements
SANDISK CORP323 citations99
US6781877B2Aug 24, 2004
Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells
SANDISK CORP520 citations99
US6522580B2Feb 18, 2003
Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
SANDISK CORP1,400 citations99
US5867429AFeb 2, 1999
High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates
SANDISK CORP1,179 citations99
US7088621B2Aug 8, 2006
Bitline governed approach for coarse/fine programming
SANDISK CORP98 citations98
US7035146B2Apr 25, 2006
Programming non-volatile memory
SANDISK CORP80 citations98
US7023733B2Apr 4, 2006
Boosting to control programming of non-volatile memory
SANDISK CORP76 citations98
US7495956B2Feb 24, 2009
Reducing read disturb for non-volatile storage
SANDISK CORP40 citations96
US7349258B2Mar 25, 2008
Reducing read disturb for non-volatile storage
SANDISK CORP44 citations96
US7262994B2Aug 28, 2007
System for reducing read disturb for non-volatile storage
SANDISK CORP43 citations96
US6894930B2May 17, 2005
Deep wordline trench to shield cross coupling between adjacent cells for scaled NAND
SANDISK CORP51 citations96
US7616480B2Nov 10, 2009
System that compensates for coupling based on sensing a neighbor using coupling
SANDISK CORP12 citations93
US7522454B2Apr 21, 2009
Compensating for coupling based on sensing a neighbor using coupling
SANDISK CORP28 citations93
US7453730B2Nov 18, 2008
Charge packet metering for coarse/fine programming of non-volatile memory
SANDISK CORP21 citations93
US7447065B2Nov 4, 2008
Reducing read disturb for non-volatile storage
SANDISK CORP18 citations93
US7447075B2Nov 4, 2008
Charge packet metering for coarse/fine programming of non-volatile memory
SANDISK CORP21 citations93
US7440318B2Oct 21, 2008
Reducing read disturb for non-volatile storage
SANDISK CORP28 citations93
US7414887B2Aug 19, 2008
Variable current sinking for coarse/fine programming of non-volatile memory
SANDISK CORP33 citations93
US7411827B2Aug 12, 2008
Boosting to control programming of non-volatile memory
SANDISK CORP21 citations93
US7397698B2Jul 8, 2008
Reducing floating gate to floating gate coupling effect
SANDISK CORP26 citations93
US7317638B2Jan 8, 2008
Efficient verification for coarse/fine programming of non-volatile memory
SANDISK CORP14 citations93
US7301812B2Nov 27, 2007
Boosting to control programming of non-volatile memory
SANDISK CORP24 citations93
US7295473B2Nov 13, 2007
System for reducing read disturb for non-volatile storage
SANDISK CORP25 citations93
US7280408B2Oct 9, 2007
Bitline governed approach for programming non-volatile memory
SANDISK CORP32 citations93
US7230851B2Jun 12, 2007
Reducing floating gate to floating gate coupling effect
SANDISK CORP35 citations93
US7170786B2Jan 30, 2007
Deep wordline trench to shield cross coupling between adjacent cells for scaled NAND
SANDISK CORP29 citations93
US7046548B2May 16, 2006
Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells
SANDISK CORP18 citations93
US7630249B2Dec 8, 2009
Intelligent control of program pulse duration
SANDISK CORP11 citations84
US7580290B2Aug 25, 2009
Non-volatile storage system with intelligent control of program pulse duration
SANDISK CORP15 citations84
US7518928B2Apr 14, 2009
Efficient verification for coarse/fine programming of non volatile memory
SANDISK CORP5 citations74
US7969778B2Jun 28, 2011
System that compensates for coupling based on sensing a neighbor using coupling
SANDISK CORP0 citations52
TOSHIBA KK
2 patentsUS7224613B2May 29, 2007
Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
TOSHIBA KK95 citations99
US7061798B2Jun 13, 2006
Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
TOSHIBA KK63 citations98