Inventor
GUTERMAN DANIEL C
US155 patents
⚠️ This page may combine multiple inventors who share the name “GUTERMAN DANIEL C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK CORP
43 patentsUS7243275B2Jul 10, 2007
Smart verify for multi-state memories
SANDISK CORP133 citations99
US7237074B2Jun 26, 2007
Tracking cells for a memory system
SANDISK CORP293 citations99
US7187592B2Mar 6, 2007
Multi-state memory
SANDISK CORP120 citations99
US7177199B2Feb 13, 2007
Behavior based programming of non-volatile memory
SANDISK CORP225 citations99
US7177195B2Feb 13, 2007
Reducing the effects of noise in non-volatile memories through multiple reads
SANDISK CORP112 citations99
US7139198B2Nov 21, 2006
Efficient verification for coarse/fine programming of non-volatile memory
SANDISK CORP153 citations99
US7137011B1Nov 14, 2006
Removable mother/daughter peripheral card
SANDISK CORP163 citations99
US7088615B2Aug 8, 2006
Multi-state memory
SANDISK CORP145 citations99
US7073103B2Jul 4, 2006
Smart verify for multi-state memories
SANDISK CORP146 citations99
US7068539B2Jun 27, 2006
Charge packet metering for coarse/fine programming of non-volatile memory
SANDISK CORP206 citations99
US7020026B2Mar 28, 2006
Bitline governed approach for program control of non-volatile memory
SANDISK CORP117 citations99
US7002843B2Feb 21, 2006
Variable current sinking for coarse/fine programming of non-volatile memory
SANDISK CORP180 citations99
US6972993B2Dec 6, 2005
Method and structure for efficient data verification operation for non-volatile memories
SANDISK CORP131 citations99
US6952365B2Oct 4, 2005
Reducing the effects of noise in non-volatile memories through multiple reads
SANDISK CORP137 citations99
US6925007B2Aug 2, 2005
Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
SANDISK CORP241 citations99
US6894926B2May 17, 2005
Multi-state memory
SANDISK CORP135 citations99
US6862218B2Mar 1, 2005
Multi-state memory
SANDISK CORP137 citations99
US6856546B2Feb 15, 2005
Multi-state memory
SANDISK CORP213 citations99
US6850441B2Feb 1, 2005
Noise reduction technique for transistors and small devices utilizing an episodic agitation
SANDISK CORP115 citations99
US6717851B2Apr 6, 2004
Method of reducing disturbs in non-volatile memory
SANDISK CORP128 citations99
US6664587B2Dec 16, 2003
EEPROM cell array structure with specific floating gate shape
SANDISK CORP146 citations99
US6621739B2Sep 16, 2003
Reducing the effects of noise in non-volatile memories through multiple reads
SANDISK CORP115 citations99
US6570785B1May 27, 2003
Method of reducing disturbs in non-volatile memory
SANDISK CORP147 citations99
US6560143B2May 6, 2003
Method and structure for efficient data verification operation for non-volatile memories
SANDISK CORP121 citations99
US6381662B1Apr 30, 2002
Removable mother/daughter peripheral card
SANDISK CORP116 citations99
US6317363B1Nov 13, 2001
Multi-state memory
SANDISK CORP160 citations99
US6317364B1Nov 13, 2001
Multi-state memory
SANDISK CORP294 citations99
US6275419B1Aug 14, 2001
Multi-state memory
SANDISK CORP147 citations99
US6266273B1Jul 24, 2001
Method and structure for reliable data copy operation for non-volatile memories
SANDISK CORP202 citations99
US6266278B1Jul 24, 2001
Dual floating gate EEPROM cell array with steering gates shared adjacent cells
SANDISK CORP173 citations99
US6266724B1Jul 24, 2001
Removable mother/daughter peripheral card
SANDISK CORP198 citations99
US6222762B1Apr 24, 2001
Multi-state memory
SANDISK CORP1,756 citations99
US6151248ANov 21, 2000
Dual floating gate EEPROM cell array with steering gates shared by adjacent cells
SANDISK CORP462 citations99
US6049899AApr 11, 2000
Soft errors handling in EEPROM devices
SANDISK CORP95 citations99
US5887145AMar 23, 1999
Removable mother/daughter peripheral card
SANDISK CORP564 citations99
US5883409AMar 16, 1999
EEPROM with split gate source side injection
SANDISK CORP216 citations99
US5798968AAug 25, 1998
Plane decode/virtual sector architecture
SANDISK CORP316 citations99
US5776810AJul 7, 1998
Method for forming EEPROM with split gate source side injection
SANDISK CORP138 citations99
US5657332AAug 12, 1997
Soft errors handling in EEPROM devices
SANDISK CORP719 citations99
US5532962AJul 2, 1996
Soft errors handling in EEPROM devices
SANDISK CORP706 citations99
US5504760AApr 2, 1996
Mixed data encoding EEPROM system
SANDISK CORP249 citations99
US7848149B2Dec 7, 2010
Reducing the effects of noise in non-volatile memories through multiple reads
SANDISK CORP61 citations98
US7716538B2May 11, 2010
Memory with cell population distribution assisted read margining
SANDISK CORP119 citations98
SUNDISK CORP
7 patentsUS5712180AJan 27, 1998
EEPROM with split gate source side injection
SUNDISK CORP480 citations99
US5396468AMar 7, 1995
Streamlined write operation for EEPROM system
SUNDISK CORP295 citations99
US5380672AJan 10, 1995
Dense vertical programmable read only memory cell structures and processes for making them
SUNDISK CORP139 citations99
US5369615ANov 29, 1994
Method for optimum erasing of EEPROM
SUNDISK CORP138 citations99
US5343063AAug 30, 1994
Dense vertical programmable read only memory cell structure and processes for making them
SUNDISK CORP903 citations99
US5313421AMay 17, 1994
EEPROM with split gate source side injection
SUNDISK CORP1,011 citations99
US5270979ADec 14, 1993
Method for optimum erasing of EEPROM
SUNDISK CORP510 citations99
Showing the top 50 of 155 patents by PatentIndex Score.