Inventor
CHO MYOUNG-KWAN
KR16 patents
⚠️ This page may combine multiple inventors who share the name “CHO MYOUNG-KWAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
12 patentsUS5789293AAug 4, 1998
Nonvolatile memory device and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD102 citations97
US5912488AJun 15, 1999
Stacked-gate flash EEPROM memory devices having mid-channel injection characteristics for high speed programming
SAMSUNG ELECTRONICS CO LTD104 citations96
US6847556B2Jan 25, 2005
Method for operating NOR type flash memory device including SONOS cells
SAMSUNG ELECTRONICS CO LTD45 citations92
US5712178AJan 27, 1998
Non-volatile semiconductor memory device and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD42 citations92
US5514889AMay 7, 1996
Non-volatile semiconductor memory device and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD95 citations91
US7315055B2Jan 1, 2008
Silicon-oxide-nitride-oxide-silicon (SONOS) memory devices having recessed channels
SAMSUNG ELECTRONICS CO LTD18 citations84
US7547943B2Jun 16, 2009
Non-volatile memory devices that include a selection transistor having a recessed channel and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD15 citations83
US6544845B2Apr 8, 2003
Methods of fabricating nonvolatile memory devices including bird's beak oxide
SAMSUNG ELECTRONICS CO LTD17 citations82
US6144064ANov 7, 2000
Split-gate EEPROM device having floating gate with double polysilicon layer
SAMSUNG ELECTRONICS CO LTD15 citations73
US7034365B2Apr 25, 2006
Integrated circuit devices having contact holes exposing gate electrodes in active regions
SAMSUNG ELECTRONICS CO LTD9 citations71
US5888871AMar 30, 1999
Methods of forming EEPROM memory cells having uniformly thick tunnelling oxide layers
SAMSUNG ELECTRONICS CO LTD5 citations62
US7320909B2Jan 22, 2008
Methods of fabricating integrated circuit devices having contact holes exposing gate electrodes in active regions
SAMSUNG ELECTRONICS CO LTD2 citations60
SK HYNIX INC
4 patentsUS10224102B2Mar 5, 2019
Semiconductor memory device and operation method thereof
SK HYNIX INC2 citations72
US12171099B2Dec 17, 2024
Semiconductor memory device capable of connecting each of a plurality of cell strings to a source line through a discharge transistor and method of manufacturing the same
SK HYNIX INC0 citations62
US12283323B2Apr 22, 2025
Memory device and method of operation with sequential discharging of word lines
SK HYNIX INC0 citations52
US10418116B2Sep 17, 2019
Memory device with control logic configured to group memory blocks, and determine driving voltages to be respectively applied to the groups to control memory operation
SK HYNIX INC0 citations41