Inventor
YABE HIROKI
JP39 patents
⚠️ This page may combine multiple inventors who share the name “YABE HIROKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK TECHNOLOGIES LLC
22 patentsUS11081167B1Aug 3, 2021
Sense amplifier architecture for low supply voltage operations
SANDISK TECHNOLOGIES LLC13 citations86
US11250920B2Feb 15, 2022
Loop-dependent switching between program-verify techniques
SANDISK TECHNOLOGIES LLC2 citations73
US11158384B1Oct 26, 2021
Apparatus and methods for configurable bit line isolation in non-volatile memory
SANDISK TECHNOLOGIES LLC6 citations73
US11087800B1Aug 10, 2021
Sense amplifier architecture providing small swing voltage sensing
SANDISK TECHNOLOGIES LLC6 citations73
US10643677B2May 5, 2020
Negative kick on bit line control transistors for faster bit line settling during sensing
SANDISK TECHNOLOGIES LLC4 citations73
US11081192B2Aug 3, 2021
Memory plane structure for ultra-low read latency applications in non-volatile memories
SANDISK TECHNOLOGIES LLC2 citations71
US10984877B1Apr 20, 2021
Multi BLCS for multi-state verify and multi-level QPW
SANDISK TECHNOLOGIES LLC5 citations71
US11348649B2May 31, 2022
Threshold voltage setting with boosting read scheme
SANDISK TECHNOLOGIES LLC0 citations63
US11004518B2May 11, 2021
Threshold voltage setting with boosting read scheme
SANDISK TECHNOLOGIES LLC1 citations63
US11869600B2Jan 9, 2024
Memory cell sensing by charge sharing between sensing nodes
SANDISK TECHNOLOGIES LLC0 citations62
US11405039B1Aug 2, 2022
Level shifter with improved negative voltage capability
SANDISK TECHNOLOGIES LLC1 citations62
US10984874B1Apr 20, 2021
Differential dbus scheme for low-latency random read for NAND memories
SANDISK TECHNOLOGIES LLC0 citations62
US10885984B1Jan 5, 2021
Area effective erase voltage isolation in NAND memory
SANDISK TECHNOLOGIES LLC0 citations61
US11488669B2Nov 1, 2022
Three-valued programming mechanism for non-volatile memory structures
SANDISK TECHNOLOGIES LLC0 citations60
US11573914B2Feb 7, 2023
Nonconsecutive mapping scheme for data path circuitry in a storage device
SANDISK TECHNOLOGIES LLC0 citations58
US10910044B2Feb 2, 2021
State coding for fractional bits-per-cell memory
SANDISK TECHNOLOGIES LLC1 citations58
US12260921B2Mar 25, 2025
Sense amplifier architecture providing reduced program verification time
SANDISK TECHNOLOGIES LLC0 citations52
US12040010B2Jul 16, 2024
IR drop compensation for sensing memory
SANDISK TECHNOLOGIES LLC0 citations52
US11972807B2Apr 30, 2024
Charge pump current regulation during voltage ramp
SANDISK TECHNOLOGIES LLC0 citations52
US11610625B2Mar 21, 2023
Hetero-plane data storage structures for non-volatile memory
SANDISK TECHNOLOGIES LLC0 citations52
US11336283B1May 17, 2022
Level shifter with improved negative voltage capability
SANDISK TECHNOLOGIES LLC0 citations52
US11177277B2Nov 16, 2021
Word line architecture for three dimensional NAND flash memory
SANDISK TECHNOLOGIES LLC0 citations51
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
4 patentsUS6998532B2Feb 14, 2006
Electronic component-built-in module
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD124 citations98
US7205483B2Apr 17, 2007
Flexible substrate having interlaminar junctions, and process for producing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD17 citations92
US7382628B2Jun 3, 2008
Circuit-component-containing module
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD15 citations84
US7321496B2Jan 22, 2008
Flexible substrate, multilayer flexible substrate and process for producing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD3 citations63
PANASONIC CORP
4 patentsUS7773386B2Aug 10, 2010
Flexible substrate, multilayer flexible substrate
PANASONIC CORP13 citations84
US7531754B2May 12, 2009
Flexible substrate having interlaminar junctions, and process for producing the same
PANASONIC CORP6 citations74
US7649267B2Jan 19, 2010
Package equipped with semiconductor chip and method for producing same
PANASONIC CORP2 citations59
US9472352B2Oct 18, 2016
Photoelectric conversion element
PANASONIC CORP1 citations52