P

Inventor

YABE HIROKI

JP39 patents
⚠️ This page may combine multiple inventors who share the name “YABE HIROKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SANDISK TECHNOLOGIES LLC

22 patents
US11081167B1Aug 3, 2021

Sense amplifier architecture for low supply voltage operations

SANDISK TECHNOLOGIES LLC13 citations86
US11250920B2Feb 15, 2022

Loop-dependent switching between program-verify techniques

SANDISK TECHNOLOGIES LLC2 citations73
US11158384B1Oct 26, 2021

Apparatus and methods for configurable bit line isolation in non-volatile memory

SANDISK TECHNOLOGIES LLC6 citations73
US11087800B1Aug 10, 2021

Sense amplifier architecture providing small swing voltage sensing

SANDISK TECHNOLOGIES LLC6 citations73
US10643677B2May 5, 2020

Negative kick on bit line control transistors for faster bit line settling during sensing

SANDISK TECHNOLOGIES LLC4 citations73
US11081192B2Aug 3, 2021

Memory plane structure for ultra-low read latency applications in non-volatile memories

SANDISK TECHNOLOGIES LLC2 citations71
US10984877B1Apr 20, 2021

Multi BLCS for multi-state verify and multi-level QPW

SANDISK TECHNOLOGIES LLC5 citations71
US11348649B2May 31, 2022

Threshold voltage setting with boosting read scheme

SANDISK TECHNOLOGIES LLC0 citations63
US11004518B2May 11, 2021

Threshold voltage setting with boosting read scheme

SANDISK TECHNOLOGIES LLC1 citations63
US11869600B2Jan 9, 2024

Memory cell sensing by charge sharing between sensing nodes

SANDISK TECHNOLOGIES LLC0 citations62
US11405039B1Aug 2, 2022

Level shifter with improved negative voltage capability

SANDISK TECHNOLOGIES LLC1 citations62
US10984874B1Apr 20, 2021

Differential dbus scheme for low-latency random read for NAND memories

SANDISK TECHNOLOGIES LLC0 citations62
US10885984B1Jan 5, 2021

Area effective erase voltage isolation in NAND memory

SANDISK TECHNOLOGIES LLC0 citations61
US11488669B2Nov 1, 2022

Three-valued programming mechanism for non-volatile memory structures

SANDISK TECHNOLOGIES LLC0 citations60
US11573914B2Feb 7, 2023

Nonconsecutive mapping scheme for data path circuitry in a storage device

SANDISK TECHNOLOGIES LLC0 citations58
US10910044B2Feb 2, 2021

State coding for fractional bits-per-cell memory

SANDISK TECHNOLOGIES LLC1 citations58
US12260921B2Mar 25, 2025

Sense amplifier architecture providing reduced program verification time

SANDISK TECHNOLOGIES LLC0 citations52
US12040010B2Jul 16, 2024

IR drop compensation for sensing memory

SANDISK TECHNOLOGIES LLC0 citations52
US11972807B2Apr 30, 2024

Charge pump current regulation during voltage ramp

SANDISK TECHNOLOGIES LLC0 citations52
US11610625B2Mar 21, 2023

Hetero-plane data storage structures for non-volatile memory

SANDISK TECHNOLOGIES LLC0 citations52
US11336283B1May 17, 2022

Level shifter with improved negative voltage capability

SANDISK TECHNOLOGIES LLC0 citations52
US11177277B2Nov 16, 2021

Word line architecture for three dimensional NAND flash memory

SANDISK TECHNOLOGIES LLC0 citations51

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

4 patents

PANASONIC CORP

4 patents

HITACHI TELECOMM TECH

2 patents

WESTERN DIGITAL TECH INC

2 patents

YAMANA MASAHITO

2 patents

YABE HIROKI

1 patent

IMEC VZW

1 patent

YAMAKI TAKEYUKI

1 patent