Inventor · disambiguated record
Subrina Rafique
Also filed as: RAFIQUE SUBRINA
5 granted patents·9 pending applications·4 citations·filing 2017–2025
67Inventor score
Top patents by PatentIndex Score
14 records- 0184US11804523B2High aspect ratio source or drain structures with abrupt dopant profileINTEL CORP·Filed 2019·Granted Oct 31, 2023·3 cites·18 claims
- 0277US2025227956A1Contact resistance reduction in transistor devices with metallization on both sidesINTEL CORP·Filed 2025·Application pending·0 cites
- 0377US2024347610A1Contact resistance reduction in transistor devices with metallization on both sidesINTEL CORP·Filed 2024·Application pending·0 cites
- 0475US12288808B2High aspect ratio source or drain structures with abrupt dopant profileINTEL CORP·Filed 2023·Granted Apr 29, 2025·0 cites·20 claims
- 0572US2024258427A1Source or drain structures for germanium n-channel devicesINTEL CORP·Filed 2024·Application pending·0 cites
- 0668US12342574B2Contact resistance reduction in transistor devices with metallization on both sidesINTEL CORP·Filed 2020·Granted Jun 24, 2025·0 cites·16 claims
- 0767US10593544B2Method for forming a thin film comprising an ultrawide bandgap oxide semiconductorUNIV CASE WESTERN RESERVE·Filed 2017·Granted Mar 17, 2020·1 cites·20 claims
- 0855US11973143B2Source or drain structures for germanium N-channel devicesINTEL CORP·Filed 2019·Granted Apr 30, 2024·0 cites·15 claims
- 0950US2023402513A1Source and drain contacts formed using sacrificial regions of source and drainINTEL CORP·Filed 2022·Application pending·0 cites
- 1050US2023197777A1Source or drain metallization prior to contact formation in stacked transistorsINTEL CORP·Filed 2021·Application pending·0 cites
- 1149US2023420528A1Self-aligned embedded source and drain contactsINTEL CORP·Filed 2022·Application pending·0 cites
- 1248US2023317789A1Source or drain structures with selective silicide contacts thereonINTEL CORP·Filed 2022·Application pending·0 cites
- 1348US2023095191A1Transistors with reduced epitaxial source/drain span via etch-back for improved cell scalingINTEL CORP·Filed 2021·Application pending·0 cites
- 1446US2024063274A1Source or drain structures with phosphorous and arsenic dopantsINTEL CORP·Filed 2022·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →