Inventor · disambiguated record
Susan Felch
Also filed as: FELCH SUSAN · FELCH SUSAN B · FELCH SUSAN BENJAMIN
6 granted patents·4 pending applications·381 citations·filing 1986–2014
86Inventor score
Files withVARIAN ASSOCIATES4ADERHOLD WOLFGANG1ADVANCED ION BEAM TECH INC1FELCH SUSAN B1TAYLOR MITCHELL C1
Top patents by PatentIndex Score
10 records- 0192US5711812AApparatus for obtaining dose uniformity in plasma doping (PLAD) ion implantation processesVARIAN ASSOCIATES·Filed 1995·Granted Jan 27, 1998·192 cites·8 claims
- 0288US5572038ACharge monitor for high potential pulse current dose measurement apparatus and methodVARIAN ASSOCIATES·Filed 1993·Granted Nov 5, 1996·76 cites·11 claims
- 0386US4807994AMethod of mapping ion implant dose uniformityVARIAN ASSOCIATES·Filed 1987·Granted Feb 28, 1989·62 cites·6 claims
- 0483US4764026ASemiconductor wafer temperature measuring device and methodVARIAN ASSOCIATES·Filed 1986·Granted Aug 16, 1988·47 cites·8 claims
- 0569US9653253B2Plasma-based material modification using a plasma source with magnetic confinementADVANCED ION BEAM TECH INC·Filed 2014·Granted May 16, 2017·2 cites·32 claims
- 0663US8999798B2Methods for forming NMOS EPI layersTAYLOR MITCHELL C·Filed 2010·Granted Apr 7, 2015·2 cites·18 claims
- 0744US2008090393A1Ultra shallow junction with rapid thermal annealADERHOLD WOLFGANG·Filed 2007·Application pending·0 cites
- 0844US2008023732A1Use of carbon co-implantation with millisecond anneal to produce ultra-shallow junctionsFELCH SUSAN B·Filed 2007·Application pending·0 cites
- 0941US2004016402A1Methods and apparatus for monitoring plasma parameters in plasma doping systemsFiled 2002·Application pending·0 cites
- 1035US2003096490A1Method of forming ultra shallow junctionsFiled 2002·Application pending·0 cites
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