Inventor
MITANI SATORU
JP42 patents
⚠️ This page may combine multiple inventors who share the name “MITANI SATORU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
12 patentsUS6493194B1Dec 10, 2002
Thin film magnetic head
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD33 citations92
US6407004B1Jun 18, 2002
Thin film device and method for manufacturing thin film device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD40 citations92
US6407885B1Jun 18, 2002
Thin film magnetic head and method for fabricating same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD25 citations92
US5335127AAug 2, 1994
Lamination type magneto-resistive head
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD28 citations92
US5436780AJul 25, 1995
Thin film magnetic head device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD48 citations89
US5095397AMar 10, 1992
Thin film magnetic head of embodied recording and reproducing transducer type
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD21 citations82
US5412524AMay 2, 1995
Magneto-resistive head
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD9 citations74
US4897318AJan 30, 1990
Laminated magnetic materials
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8 citations74
US4133703AJan 9, 1979
Permanent magnetic Mn-Al-C alloy
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11 citations74
US4663683AMay 5, 1987
Magnetoresistive thin film head
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations72
US5585985ADec 17, 1996
Magneto-resistive head including a film of hard magnetic material
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations63
US5663644ASep 2, 1997
Magnetoresistive sensor having a bias field applied at approximately 56°
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD1 citations52
PANASONIC CORP
11 patentsUS8022502B2Sep 20, 2011
Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element
PANASONIC CORP60 citations98
US7577022B2Aug 18, 2009
Electric element, memory device, and semiconductor integrated circuit formed using a state-variable material whose resistance value varies according to an applied pulse voltage
PANASONIC CORP56 citations98
US7525832B2Apr 28, 2009
Memory device and semiconductor integrated circuit
PANASONIC CORP34 citations93
US8345465B2Jan 1, 2013
Driving method of variable resistance element, initialization method of variable resistance element, and nonvolatile storage device
PANASONIC CORP10 citations84
US7786548B2Aug 31, 2010
Electric element, memory device, and semiconductor integrated circuit
PANASONIC CORP13 citations84
US9111610B2Aug 18, 2015
Method of driving nonvolatile memory element and nonvolatile memory device
PANASONIC CORP4 citations73
US7964869B2Jun 21, 2011
Memory element, memory apparatus, and semiconductor integrated circuit
PANASONIC CORP2 citations63
US7787280B2Aug 31, 2010
Electric element, memory device, and semiconductor integrated circuit
PANASONIC CORP6 citations63
US8830730B2Sep 9, 2014
Variable resistance nonvolatile storage device and method of forming memory cell
PANASONIC CORP1 citations52
US7855910B2Dec 21, 2010
Electric element, memory device, and semiconductor integrated circuit
PANASONIC CORP1 citations52
US9390797B2Jul 12, 2016
Driving method of variable resistance element and non-volatile memory device
PANASONIC CORP0 citations42
KANZAWA YOSHIHIKO
4 patentsUS8445319B2May 21, 2013
Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element
KANZAWA YOSHIHIKO15 citations84
US8179713B2May 15, 2012
Nonvolatile memory element, nonvolatile memory device, and nonvolatile semiconductor device
KANZAWA YOSHIHIKO17 citations83
US8338816B2Dec 25, 2012
Nonvolatile memory element, and nonvolatile semiconductor device using the nonvolatile memory element
KANZAWA YOSHIHIKO5 citations62
US8445885B2May 21, 2013
Nonvolatile memory element having a thin platinum containing electrode
KANZAWA YOSHIHIKO1 citations52
MURAOKA SHUNSAKU
4 patentsUS8553444B2Oct 8, 2013
Variable resistance nonvolatile storage device and method of forming memory cell
MURAOKA SHUNSAKU9 citations83
US8395930B2Mar 12, 2013
Method of programming variable resistance element and nonvolatile storage device
MURAOKA SHUNSAKU6 citations83
US8279658B2Oct 2, 2012
Method of programming variable resistance element and nonvolatile storage device
MURAOKA SHUNSAKU8 citations83
US9153319B2Oct 6, 2015
Method for driving nonvolatile memory element, and nonvolatile memory device having a variable resistance element
MURAOKA SHUNSAKU0 citations41
SHIMAKAWA KAZUHIKO
3 patentsUS8094485B2Jan 10, 2012
Variable resistance nonvolatile storage device with oxygen-deficient oxide layer and asymmetric substrate bias effect
SHIMAKAWA KAZUHIKO22 citations92
US8472238B2Jun 25, 2013
Variable resistance nonvolatile storage device with oxygen-deficient oxide layer and asymmetric substrate bias effect
SHIMAKAWA KAZUHIKO5 citations84
US8233311B2Jul 31, 2012
Variable resistance nonvolatile storage device having a source line formed of parallel wiring layers connected to each other through vias
SHIMAKAWA KAZUHIKO11 citations84
MITANI SATORU
3 patentsUS8309946B2Nov 13, 2012
Resistance variable element
MITANI SATORU7 citations83
US8264865B2Sep 11, 2012
Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor device incorporating nonvolatile memory element
MITANI SATORU15 citations83
US8553446B2Oct 8, 2013
Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor device incorporating nonvolatile memory element
MITANI SATORU3 citations61