Inventor

CAO JIANJUN

US64 patents

⚠️ This page may combine multiple inventors who share the name “CAO JIANJUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CAO JIANJUN

INT RECTIFIER CORP

Low on resistance power MOSFET with variably spaced trenches and offset contacts

Trench mosfet with field relief feature

MOSgated device termination with guard rings under field plate

III-nitride semiconductor device

Current sense trench type MOSFET with improved accuracy and ESD withstand capability

Power MOSFET with ultra-deep base and reduced on resistance

Termination design for deep source electrode MOSFET

MOSgated power semiconductor device with source field electrode

Trench power MOSFET with reduced gate resistance

III-nitride power device

Active area shaping for III-nitride devices

Depletion implant for power MOSFET

Reduced mask count process for manufacture of mosgated device

Power MOSFET with ultra-deep base and reduced on resistance

Low voltage superjunction MOSFET

Trench power MOSFET fabrication using inside/outside spacers

Superjunction device and method of manufacture therefor

Termination structure for a power semiconductor device

EFFICIENT POWER CONVERSION CORP

Semiconductor devices with back surface isolation

Multi-step surface passivation structures and methods for fabricating same

GaN transistors with polysilicon layers used for creating additional components

Compensated gate MISFET and method for fabricating the same

GaN transistors with polysilicon layers for creating additional components

Enhancement mode GaN HEMT device

GaN transistors with polysilicon layers used for creating additional components

Flip chip interconnection with reduced current density

Isolation structure in gallium nitride devices and integrated circuits

Integrated circuit with multiple gallium nitride transistor sets

Integrated gallium nitride based DC-DC converter

Integrated circuit for gate overvoltage protection of power devices

Enhancement-mode GaN transistor with selective and nonselective etch layers for improved uniformity in GaN spacer thickness

Field plate structures with patterned surface passivation layers and methods for manufacturing thereof

Gate with self-aligned ledge for enhancement mode GaN transistors

LIDOW ALEXANDER

Enhancement mode GaN HEMT device and method for fabricating the same

Enhancement mode GaN HEMT device with gate spacer and method for fabricating the same

Back diffusion suppression structures

Semiconductor devices with back surface isolation

Ion implanted and self aligned gate structure for GaN transistors

Enhancement mode gallium nitride transistor with improved gate characteristics

Bumped, self-isolated GaN transistor chip with electrically isolated back surface

UNIVERSAL ELECTRONICS INC

System and method for creating a controlling device

System and method for creating a controlling device

System and method for creating a controlling device

System and method for creating a controlling device

BRIERE MICHAEL A

III-nitride semiconductor device with stepped gate trench and process for its manufacture

EFFICIENT POWER CONV CORP

Gate with self-aligned ledged for enhancement mode GaN transistors

CAO JIANJUN

III-nitride power device

BEACH ROBERT

III-nitride power semiconductor device

GD MIDEA AIR CONDITIONING EQUIPMENT CO LTD

Window air conditioner with side insulating sealing assembly

UNIV JIANGNAN

Method for fast judging and optimizing light emitting quality of light guide plate based on image processing technology