Inventor

LIDOW ALEXANDER

US42 patents

⚠️ This page may combine multiple inventors who share the name “LIDOW ALEXANDER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LIDOW ALEXANDER

INT RECTIFIER CORP

Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide

High power MOSFET with low on-resistance and high breakdown voltage

High power MOSFET with low on-resistance and high breakdown voltage

High power MOSFET with low on-resistance and high breakdown voltage

High power MOSFET with low on-resistance and high breakdown voltage

High power mosfet with low on-resistance and high breakdown voltage

Plural polygon source pattern for mosfet

Plural polygon source pattern for MOSFET

High power MOSFET with low on-resistance and high breakdown voltage

High power MOSFET with low on-resistance and high breakdown voltage

Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide

High power MOSFET with low on-resistance and high breakdown voltage

Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions

Composite metal and polysilicon field plate structure for high voltage semiconductor devices

High power MOSFET with direct connection from connection pads to underlying silicon

Hybrid semiconductor device having a GaN transistor and a silicon MOSFET

Hybrid semiconductor device

Method of manufacture of high speed, high power bipolar transistor

Ultra thin FET

EFFICIENT POWER CONVERSION CORP

Semiconductor devices with back surface isolation

GaN transistors with polysilicon layers used for creating additional components

Compensated gate MISFET and method for fabricating the same

GaN transistors with polysilicon layers for creating additional components

Enhancement mode GaN HEMT device

GaN transistors with polysilicon layers used for creating additional components

Isolation structure in gallium nitride devices and integrated circuits

Integrated circuit with multiple gallium nitride transistor sets

Integrated gallium nitride based DC-DC converter

Gate with self-aligned ledge for enhancement mode GaN transistors

Semiconductor devices with back surface isolation

Integrated circuit with matching threshold voltages and method for making same

GaN device with reduced output capacitance and process for making same

Method to fabricate self-aligned isolation in gallium nitride devices and integrated circuits

LIDOW ALEXANDER

Enhancement mode GaN HEMT device and method for fabricating the same

Enhancement mode GaN HEMT device with gate spacer and method for fabricating the same

Back diffusion suppression structures

Semiconductor devices with back surface isolation

Ion implanted and self aligned gate structure for GaN transistors

Enhancement mode gallium nitride transistor with improved gate characteristics

Bumped, self-isolated GaN transistor chip with electrically isolated back surface

EFFICIENT POWER CONV CORP

Gate with self-aligned ledged for enhancement mode GaN transistors

Integrated circuit with matching threshold voltages and method for making same