P

Inventor

KATOCH ATUL

CA97 patents
⚠️ This page may combine multiple inventors who share the name “KATOCH ATUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

37 patents
US11309000B2Apr 19, 2022

Systems and methods for controlling power management operations in a memory device

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10923182B2Feb 16, 2021

Fixed-level charge sharing type LCV for memory compiler

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations83
US10783938B2Sep 22, 2020

SRAM with local bit line, input/output circuit, and global bit line

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations82
US10699766B2Jun 30, 2020

Word-line driver and method of operating a word-line driver

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations82
US10475502B2Nov 12, 2019

Word-line driver and method of operating a word-line driver

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations82
US11763863B2Sep 19, 2023

Systems and methods for controlling power management operations in a memory device

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US12165739B2Dec 10, 2024

Systems and methods for controlling power management operations in a memory device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11854587B2Dec 26, 2023

Low power wake up for memory

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11361818B2Jun 14, 2022

Memory device with global and local latches

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9881655B2Jan 30, 2018

Memory circuit having data lines selectively coupled to a sense amplifier and method for operating the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9704599B1Jul 11, 2017

Memory circuit with assist circuit trimming

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11929113B2Mar 12, 2024

Variable voltage bit line precharge

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11734142B2Aug 22, 2023

Scan synchronous-write-through testing architectures for a memory device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11521673B2Dec 6, 2022

Variable voltage bit line precharge

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11256588B2Feb 22, 2022

Scan synchronous-write-through testing architectures for a memory device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10163477B1Dec 25, 2018

Memory array having disturb detector and write assistor

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11031063B2Jun 8, 2021

Word-line driver and method of operating a word-line driver

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11935589B2Mar 19, 2024

Bit line pre-charge circuit for power management modes in multi bank SRAM

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations70
US11929110B2Mar 12, 2024

Memory circuit and method of operating same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations70
US11626158B2Apr 11, 2023

Bit line pre-charge circuit for power management modes in multi bank SRAM

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations70
US10770122B2Sep 8, 2020

Memory input hold time adjustment

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations67
US12217792B2Feb 4, 2025

Memory circuit and method of operating same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64
US12361991B2Jul 15, 2025

Far end driver for memory clock

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12340869B2Jun 24, 2025

Low power wake up for memory

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12322474B2Jun 3, 2025

Memory device, read clock generation circuit, and method for controlling read operation in memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12190944B2Jan 7, 2025

Memory device with signal edge sharpener circuitry

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12131770B1Oct 29, 2024

Word line booster circuit and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12073877B2Aug 27, 2024

Robust circuit for negative bit line generation in SRAM cells

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12009055B2Jun 11, 2024

Far end driver for memory clock

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11705183B2Jul 18, 2023

Word line booster circuit and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10984854B1Apr 20, 2021

Memory device with signal edge sharpener circuitry

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9916874B2Mar 13, 2018

Memory architecture having first and second voltages

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12512150B2Dec 30, 2025

Memory device with global and local latches

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12379740B2Aug 5, 2025

Technique to mitigate clock generation failure at high input clock slew

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12374386B2Jul 29, 2025

Variable voltage bit line precharge

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12315552B2May 27, 2025

Word line delay interlock circuit for write operation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12272427B2Apr 8, 2025

Semiconductor device including first and second clock generators

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

TAIWAN SEMICONDUCTOR MFG

7 patents

KATOCH ATUL

5 patents

NXP BV

1 patent

Showing the top 50 of 97 patents by PatentIndex Score.