Inventor
OH JIN YONG
US21 patents
⚠️ This page may combine multiple inventors who share the name “OH JIN YONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
YANGTZE MEMORY TECH CO LTD
15 patentsUS11088166B2Aug 10, 2021
3D NAND memory device and method of forming the same
YANGTZE MEMORY TECH CO LTD7 citations83
US10984866B2Apr 20, 2021
Non-volatile memory device utilizing dummy memory block as pool capacitor
YANGTZE MEMORY TECH CO LTD3 citations72
US12183403B2Dec 31, 2024
Three-dimensional memory device and improved methods of reading the same by shortening read times
YANGTZE MEMORY TECH CO LTD0 citations62
US11849585B2Dec 19, 2023
Three-dimensional memory devices having backside insulating structures and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11849576B2Dec 19, 2023
Non-volatile memory device and manufacturing method thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US11737264B2Aug 22, 2023
Non-volatile memory device utilizing dummy memory block as pool capacitor
YANGTZE MEMORY TECH CO LTD0 citations62
US11616077B2Mar 28, 2023
3D NAND memory device and method of forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11594284B2Feb 28, 2023
Read time of three-dimensional memory device
YANGTZE MEMORY TECH CO LTD1 citations62
US11581323B2Feb 14, 2023
Non-volatile memory device and manufacturing method thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US11563029B2Jan 24, 2023
3D NAND memory device and method of forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11552089B2Jan 10, 2023
Three-dimensional memory devices and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11302711B2Apr 12, 2022
Three-dimensional memory devices having a backside trench isolation and methods for forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11282849B2Mar 22, 2022
Non-volatile memory device utilizing dummy memory block as pool capacitor
YANGTZE MEMORY TECH CO LTD1 citations62
US11063056B2Jul 13, 2021
Non-volatile memory device and manufacturing method thereof
YANGTZE MEMORY TECH CO LTD1 citations62
US11488973B2Nov 1, 2022
Memory device having staircase structure including word line tiers and formation method thereof
YANGTZE MEMORY TECH CO LTD0 citations51
SK HYNIX INC
3 patentsUS10490244B2Nov 26, 2019
Nonvolatile memory device performing program operation and operation method thereof
SK HYNIX INC6 citations83
US10482976B2Nov 19, 2019
Memory device performing UV-assisted erase operation
SK HYNIX INC2 citations72
US10878868B2Dec 29, 2020
Nonvolatile memory device performing program operation and operation method thereof
SK HYNIX INC0 citations51