P

Inventor

OH JIN YONG

US21 patents
⚠️ This page may combine multiple inventors who share the name “OH JIN YONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YANGTZE MEMORY TECH CO LTD

15 patents
US11088166B2Aug 10, 2021

3D NAND memory device and method of forming the same

YANGTZE MEMORY TECH CO LTD7 citations83
US10984866B2Apr 20, 2021

Non-volatile memory device utilizing dummy memory block as pool capacitor

YANGTZE MEMORY TECH CO LTD3 citations72
US12183403B2Dec 31, 2024

Three-dimensional memory device and improved methods of reading the same by shortening read times

YANGTZE MEMORY TECH CO LTD0 citations62
US11849585B2Dec 19, 2023

Three-dimensional memory devices having backside insulating structures and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US11849576B2Dec 19, 2023

Non-volatile memory device and manufacturing method thereof

YANGTZE MEMORY TECH CO LTD0 citations62
US11737264B2Aug 22, 2023

Non-volatile memory device utilizing dummy memory block as pool capacitor

YANGTZE MEMORY TECH CO LTD0 citations62
US11616077B2Mar 28, 2023

3D NAND memory device and method of forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US11594284B2Feb 28, 2023

Read time of three-dimensional memory device

YANGTZE MEMORY TECH CO LTD1 citations62
US11581323B2Feb 14, 2023

Non-volatile memory device and manufacturing method thereof

YANGTZE MEMORY TECH CO LTD0 citations62
US11563029B2Jan 24, 2023

3D NAND memory device and method of forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US11552089B2Jan 10, 2023

Three-dimensional memory devices and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US11302711B2Apr 12, 2022

Three-dimensional memory devices having a backside trench isolation and methods for forming the same

YANGTZE MEMORY TECH CO LTD0 citations62
US11282849B2Mar 22, 2022

Non-volatile memory device utilizing dummy memory block as pool capacitor

YANGTZE MEMORY TECH CO LTD1 citations62
US11063056B2Jul 13, 2021

Non-volatile memory device and manufacturing method thereof

YANGTZE MEMORY TECH CO LTD1 citations62
US11488973B2Nov 1, 2022

Memory device having staircase structure including word line tiers and formation method thereof

YANGTZE MEMORY TECH CO LTD0 citations51

SK HYNIX INC

3 patents

SAMSUNG ELECTRONICS CO LTD

2 patents

OH JIN-YONG

1 patent