Inventor
KOVESHNIKOV SERGEI V
US16 patents
⚠️ This page may combine multiple inventors who share the name “KOVESHNIKOV SERGEI V”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SEH AMERICA INC
13 patentsUS6620632B2Sep 16, 2003
Method for evaluating impurity concentrations in semiconductor substrates
SEH AMERICA INC18 citations86
US6673147B2Jan 6, 2004
High resistivity silicon wafer having electrically inactive dopant and method of producing same
SEH AMERICA INC16 citations82
US6630363B2Oct 7, 2003
Method for evaluating impurity concentrations in unpolished wafers grown by the Czochralski method
SEH AMERICA INC4 citations73
US6669777B2Dec 30, 2003
Method of producing a high resistivity silicon wafer utilizing heat treatment that occurs during device fabrication
SEH AMERICA INC9 citations72
US6583024B1Jun 24, 2003
High resistivity silicon wafer with thick epitaxial layer and method of producing same
SEH AMERICA INC7 citations72
US6565652B1May 20, 2003
High resistivity silicon wafer and method of producing same using the magnetic field Czochralski method
SEH AMERICA INC8 citations72
US6576501B1Jun 10, 2003
Double side polished wafers having external gettering sites, and method of producing same
SEH AMERICA INC8 citations65
US6794227B2Sep 21, 2004
Method of producing an SOI wafer
SEH AMERICA INC2 citations62
US6649427B2Nov 18, 2003
Method for evaluating impurity concentrations in epitaxial susceptors
SEH AMERICA INC3 citations62
US6632688B2Oct 14, 2003
Method for evaluating impurity concentrations in epitaxial reagent gases
SEH AMERICA INC2 citations62
US6423556B1Jul 23, 2002
Method for evaluating impurity concentrations in heat treatment furnaces
SEH AMERICA INC2 citations62
US6896727B2May 24, 2005
Method of determining nitrogen concentration within a wafer
SEH AMERICA INC0 citations51
US6669775B2Dec 30, 2003
High resistivity silicon wafer produced by a controlled pull rate czochralski method
SEH AMERICA INC1 citations50