Inventor
CHOI KYUNGIN
KR38 patents
Patents
38 patentsUS10355000B2Jul 16, 2019
Method of fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD8 citations83
US10043800B2Aug 7, 2018
Integrated circuit device with gate line crossing fin-type active region
SAMSUNG ELECTRONICS CO LTD10 citations83
US9577075B2Feb 21, 2017
Method of manufacturing semiconductor device using plasma doping process and semiconductor device manufactured by the method
SAMSUNG ELECTRONICS CO LTD6 citations82
US11233151B2Jan 25, 2022
Active pattern structure and semiconductor device including the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US11682673B2Jun 20, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations72
US11322494B2May 3, 2022
Method of fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations72
US10522537B2Dec 31, 2019
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD3 citations72
US9793381B2Oct 17, 2017
Method for manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations72
US10128376B2Nov 13, 2018
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US10002788B2Jun 19, 2018
Methods of fabricating semiconductor devices
SAMSUNG ELECTRONICS CO LTD2 citations71
US9941174B2Apr 10, 2018
Semiconductor devices having fin active regions
SAMSUNG ELECTRONICS CO LTD3 citations71
US12328937B2Jun 10, 2025
Integrated circuit devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12288805B2Apr 29, 2025
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12256564B2Mar 18, 2025
Semiconductor device having a liner layer and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12243874B2Mar 4, 2025
Method of forming a static random-access memory (SRAM) cell with fin field effect transistors
SAMSUNG ELECTRONICS CO LTD0 citations62
US12113108B2Oct 8, 2024
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD1 citations62
US12094975B2Sep 17, 2024
Active pattern structure and semiconductor device including the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12046632B2Jul 23, 2024
Semiconductor device having air gap between gate electrode and source/drain pattern
SAMSUNG ELECTRONICS CO LTD0 citations62
US12034043B2Jul 9, 2024
Integrated circuit device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11888028B2Jan 30, 2024
Semiconductor device having a liner layer and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11791400B2Oct 17, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11749754B2Sep 5, 2023
Active pattern structure and semiconductor device including the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11626401B2Apr 11, 2023
Integrated circuit devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11605711B2Mar 14, 2023
Semiconductor device having an air gap between gate electrode and source/drain pattern
SAMSUNG ELECTRONICS CO LTD1 citations62
US11532620B2Dec 20, 2022
Integrated circuit devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11417731B2Aug 16, 2022
Semiconductor device including a field effect transistor and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11205649B2Dec 21, 2021
Integrated circuit devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11201087B2Dec 14, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12310055B2May 20, 2025
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12142652B2Nov 12, 2024
Semiconductor device including a capping pattern
SAMSUNG ELECTRONICS CO LTD1 citations61
US11881508B2Jan 23, 2024
Method of fabricating a semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations61
US11380760B2Jul 5, 2022
Semiconductor device including a densified device isolation layer
SAMSUNG ELECTRONICS CO LTD0 citations61
US12495578B2Dec 9, 2025
Semiconductor devices including source/drain layers and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US10804269B2Oct 13, 2020
Method of fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US9825153B2Nov 21, 2017
Method of manufacturing semiconductor device using plasma doping process and semiconductor device manufactured by the method
SAMSUNG ELECTRONICS CO LTD0 citations51
US10847611B2Nov 24, 2020
Semiconductor device including patterns and layers having different helium concentrations and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US10312153B2Jun 4, 2019
Semiconductor devices having FIN active regions
SAMSUNG ELECTRONICS CO LTD0 citations50
US12598804B2Apr 7, 2026
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations44