Inventor
NOWAK EDWARD JOSEPH
US47 patents
⚠️ This page may combine multiple inventors who share the name “NOWAK EDWARD JOSEPH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
42 patentsUS6512269B1Jan 28, 2003
High-voltage high-speed SOI MOSFET
IBM96 citations98
US6432754B1Aug 13, 2002
Double SOI device with recess etch and epitaxy
IBM141 citations98
US6891235B1May 10, 2005
FET with T-shaped gate
IBM56 citations96
US5973508AOct 26, 1999
Voltage translation circuit for mixed voltage applications
IBM55 citations96
US5675185AOct 7, 1997
Semiconductor structure incorporating thin film transistors with undoped cap oxide layers
IBM123 citations96
US6239649B1May 29, 2001
Switched body SOI (silicon on insulator) circuits and fabrication method therefor
IBM78 citations95
US6022766AFeb 8, 2000
Semiconductor structure incorporating thin film transistors, and methods for its manufacture
IBM76 citations94
US5672994ASep 30, 1997
Antifuse circuit using standard MOSFET devices
IBM65 citations94
US7323374B2Jan 29, 2008
Dense chevron finFET and method of manufacturing same
IBM22 citations93
US7282423B2Oct 16, 2007
Method of forming fet with T-shaped gate
IBM28 citations93
US7532501B2May 12, 2009
Semiconductor device including back-gated transistors and method of fabricating the device
IBM29 citations92
US6191451B1Feb 20, 2001
Semiconductor device with decoupling capacitance
IBM18 citations92
US5831452ANov 3, 1998
Leak tolerant low power dynamic circuits
IBM29 citations92
US6605981B2Aug 12, 2003
Apparatus for biasing ultra-low voltage logic circuits
IBM51 citations91
US6509725B1Jan 21, 2003
Self-regulating voltage divider for series-stacked voltage rails
IBM27 citations91
US5774011AJun 30, 1998
Antifuse circuit using standard MOSFET devices
IBM54 citations91
US5670388ASep 23, 1997
Method of making contacted body silicon-on-insulator field effect transistor
IBM41 citations91
US7964465B2Jun 21, 2011
Transistors having asymmetric strained source/drain portions
IBM9 citations84
US7473593B2Jan 6, 2009
Semiconductor transistors with expanded top portions of gates
IBM9 citations84
US7399664B1Jul 15, 2008
Formation of spacers for FinFETs (Field Effect Transistors)
IBM15 citations81
US7646070B2Jan 12, 2010
Spacers for FinFETs (Field Effect Transistors)
IBM13 citations79
US7635656B2Dec 22, 2009
Serial irradiation of a substrate by multiple radiation sources
IBM7 citations74
US6404236B1Jun 11, 2002
Domino logic circuit having multiplicity of gate dielectric thicknesses
IBM10 citations74
US6365484B1Apr 2, 2002
Method of forming semiconductor device with decoupling capacitance
IBM7 citations74
US6459106B2Oct 1, 2002
Dynamic threshold voltage devices with low gate to substrate resistance
IBM5 citations71
US6429056B1Aug 6, 2002
Dynamic threshold voltage devices with low gate to substrate resistance
IBM6 citations71
US8354351B2Jan 15, 2013
Serial irradiation of a substrate by multiple radiation sources
IBM2 citations63
US8039376B2Oct 18, 2011
Methods of changing threshold voltages of semiconductor transistors by ion implantation
IBM5 citations63
US7982269B2Jul 19, 2011
Transistors having asymmetric strained source/drain portions
IBM6 citations63
US7877712B2Jan 25, 2011
System for and method of verifying IC authenticity
IBM2 citations63
US7790636B2Sep 7, 2010
Simultaneous irradiation of a substrate by multiple radiation sources
IBM5 citations63
US7685557B2Mar 23, 2010
Radiation mask with spatially variable transmissivity
IBM2 citations63
US7560753B2Jul 14, 2009
Field effect transistor with thin gate electrode and method of fabricating same
IBM4 citations63
US7453281B2Nov 18, 2008
Integrated circuit with anti-counterfeiting measures
IBM3 citations63
US7374980B2May 20, 2008
Field effect transistor with thin gate electrode and method of fabricating same
IBM2 citations63
US7541613B2Jun 2, 2009
Methods for reducing within chip device parameter variations
IBM2 citations60
US7393703B2Jul 1, 2008
Method for reducing within chip device parameter variations
IBM5 citations60
US7851315B2Dec 14, 2010
Method for fabricating a field effect transistor having a dual thickness gate electrode
IBM0 citations52
US7821109B2Oct 26, 2010
Stressed dielectric devices and methods of fabricating same
IBM0 citations52
US7626244B2Dec 1, 2009
Stressed dielectric devices and methods of fabricating same
IBM0 citations52
US7772656B2Aug 10, 2010
Combination planar FET and FinFET device
IBM1 citations48
US7791166B2Sep 7, 2010
Formation of dummy features and inductors in semiconductor fabrication
IBM0 citations41
ANDERSON BRENT ALAN
3 patentsUS8466503B2Jun 18, 2013
Semiconductor transistors with expanded top portions of gates
ANDERSON BRENT ALAN4 citations61
US8586488B2Nov 19, 2013
Configuring radiation sources to simultaneously irradiate a substrate
ANDERSON BRENT ALAN0 citations51
US8518757B2Aug 27, 2013
Method of fabricating strained semiconductor structures from silicon-on-insulator (SOI)
ANDERSON BRENT ALAN1 citations51