P

Inventor

NOWAK EDWARD JOSEPH

US47 patents
⚠️ This page may combine multiple inventors who share the name “NOWAK EDWARD JOSEPH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

42 patents
US6512269B1Jan 28, 2003

High-voltage high-speed SOI MOSFET

IBM96 citations98
US6432754B1Aug 13, 2002

Double SOI device with recess etch and epitaxy

IBM141 citations98
US6891235B1May 10, 2005

FET with T-shaped gate

IBM56 citations96
US5973508AOct 26, 1999

Voltage translation circuit for mixed voltage applications

IBM55 citations96
US5675185AOct 7, 1997

Semiconductor structure incorporating thin film transistors with undoped cap oxide layers

IBM123 citations96
US6239649B1May 29, 2001

Switched body SOI (silicon on insulator) circuits and fabrication method therefor

IBM78 citations95
US6022766AFeb 8, 2000

Semiconductor structure incorporating thin film transistors, and methods for its manufacture

IBM76 citations94
US5672994ASep 30, 1997

Antifuse circuit using standard MOSFET devices

IBM65 citations94
US7323374B2Jan 29, 2008

Dense chevron finFET and method of manufacturing same

IBM22 citations93
US7282423B2Oct 16, 2007

Method of forming fet with T-shaped gate

IBM28 citations93
US7532501B2May 12, 2009

Semiconductor device including back-gated transistors and method of fabricating the device

IBM29 citations92
US6191451B1Feb 20, 2001

Semiconductor device with decoupling capacitance

IBM18 citations92
US5831452ANov 3, 1998

Leak tolerant low power dynamic circuits

IBM29 citations92
US6605981B2Aug 12, 2003

Apparatus for biasing ultra-low voltage logic circuits

IBM51 citations91
US6509725B1Jan 21, 2003

Self-regulating voltage divider for series-stacked voltage rails

IBM27 citations91
US5774011AJun 30, 1998

Antifuse circuit using standard MOSFET devices

IBM54 citations91
US5670388ASep 23, 1997

Method of making contacted body silicon-on-insulator field effect transistor

IBM41 citations91
US7964465B2Jun 21, 2011

Transistors having asymmetric strained source/drain portions

IBM9 citations84
US7473593B2Jan 6, 2009

Semiconductor transistors with expanded top portions of gates

IBM9 citations84
US7399664B1Jul 15, 2008

Formation of spacers for FinFETs (Field Effect Transistors)

IBM15 citations81
US7646070B2Jan 12, 2010

Spacers for FinFETs (Field Effect Transistors)

IBM13 citations79
US7635656B2Dec 22, 2009

Serial irradiation of a substrate by multiple radiation sources

IBM7 citations74
US6404236B1Jun 11, 2002

Domino logic circuit having multiplicity of gate dielectric thicknesses

IBM10 citations74
US6365484B1Apr 2, 2002

Method of forming semiconductor device with decoupling capacitance

IBM7 citations74
US6459106B2Oct 1, 2002

Dynamic threshold voltage devices with low gate to substrate resistance

IBM5 citations71
US6429056B1Aug 6, 2002

Dynamic threshold voltage devices with low gate to substrate resistance

IBM6 citations71
US8354351B2Jan 15, 2013

Serial irradiation of a substrate by multiple radiation sources

IBM2 citations63
US8039376B2Oct 18, 2011

Methods of changing threshold voltages of semiconductor transistors by ion implantation

IBM5 citations63
US7982269B2Jul 19, 2011

Transistors having asymmetric strained source/drain portions

IBM6 citations63
US7877712B2Jan 25, 2011

System for and method of verifying IC authenticity

IBM2 citations63
US7790636B2Sep 7, 2010

Simultaneous irradiation of a substrate by multiple radiation sources

IBM5 citations63
US7685557B2Mar 23, 2010

Radiation mask with spatially variable transmissivity

IBM2 citations63
US7560753B2Jul 14, 2009

Field effect transistor with thin gate electrode and method of fabricating same

IBM4 citations63
US7453281B2Nov 18, 2008

Integrated circuit with anti-counterfeiting measures

IBM3 citations63
US7374980B2May 20, 2008

Field effect transistor with thin gate electrode and method of fabricating same

IBM2 citations63
US7541613B2Jun 2, 2009

Methods for reducing within chip device parameter variations

IBM2 citations60
US7393703B2Jul 1, 2008

Method for reducing within chip device parameter variations

IBM5 citations60
US7851315B2Dec 14, 2010

Method for fabricating a field effect transistor having a dual thickness gate electrode

IBM0 citations52
US7821109B2Oct 26, 2010

Stressed dielectric devices and methods of fabricating same

IBM0 citations52
US7626244B2Dec 1, 2009

Stressed dielectric devices and methods of fabricating same

IBM0 citations52
US7772656B2Aug 10, 2010

Combination planar FET and FinFET device

IBM1 citations48
US7791166B2Sep 7, 2010

Formation of dummy features and inductors in semiconductor fabrication

IBM0 citations41

ANDERSON BRENT ALAN

3 patents

GLOBALFOUNDRIES INC

1 patent

BEINTNER JOCHEN

1 patent