Inventor
HAMZAOGLU FATIH
US42 patents
⚠️ This page may combine multiple inventors who share the name “HAMZAOGLU FATIH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
33 patentsUS6519176B1Feb 11, 2003
Dual threshold SRAM cell for single-ended sensing
INTEL CORP57 citations96
US7403426B2Jul 22, 2008
Memory with dynamically adjustable supply
INTEL CORP36 citations93
US7079426B2Jul 18, 2006
Dynamic multi-Vcc scheme for SRAM cell stability control
INTEL CORP46 citations93
US6608786B2Aug 19, 2003
Apparatus and method for a memory storage cell leakage cancellation scheme
INTEL CORP18 citations93
US7177176B2Feb 13, 2007
Six-transistor (6T) static random access memory (SRAM) with dynamically variable p-channel metal oxide semiconductor (PMOS) strength
INTEL CORP23 citations89
US10515697B1Dec 24, 2019
Apparatuses and methods to control operations performed on resistive memory cells
INTEL CORP12 citations82
US9286976B2Mar 15, 2016
Apparatuses and methods for detecting write completion for resistive memory
INTEL CORP7 citations81
US6801465B2Oct 5, 2004
Apparatus and method for a memory storage cell leakage cancellation scheme
INTEL CORP8 citations74
US11462541B2Oct 4, 2022
Memory cells based on vertical thin-film transistors
INTEL CORP2 citations73
US9865322B2Jan 9, 2018
Low resistance bitline and sourceline apparatus for improving read and write operations of a nonvolatile memory
INTEL CORP4 citations72
US7657767B2Feb 2, 2010
Cache leakage shut-off mechanism
INTEL CORP7 citations72
US12238913B2Feb 25, 2025
Two transistor memory cell using stacked thin-film transistors
INTEL CORP1 citations64
US9978447B2May 22, 2018
Memory cell with improved write margin
INTEL CORP1 citations63
US9666268B2May 30, 2017
Apparatus for adjusting supply level to improve write margin of a memory cell
INTEL CORP1 citations63
US6351156B1Feb 26, 2002
Noise reduction circuit
INTEL CORP2 citations63
US12310001B2May 20, 2025
Decoupling capacitors and methods of fabrication
INTEL CORP1 citations62
US11094358B2Aug 17, 2021
Semiconductor chip manufacturing process for integrating logic circuitry, embedded DRAM and embedded non-volatile ferroelectric random access memory (FERAM) on a same semiconductor die
INTEL CORP0 citations62
US9281043B1Mar 8, 2016
Resistive memory write circuitry with bit line drive strength based on storage cell line resistance
INTEL CORP2 citations62
US12426247B2Sep 23, 2025
Capacitor connections in dielectric layers
INTEL CORP0 citations61
US11991873B2May 21, 2024
Capacitor separations in dielectric layers
INTEL CORP0 citations61
US11832438B2Nov 28, 2023
Capacitor connections in dielectric layers
INTEL CORP0 citations61
US11690212B2Jun 27, 2023
Memory architecture at back-end-of-line
INTEL CORP0 citations61
US11610894B2Mar 21, 2023
Capacitor separations in dielectric layers
INTEL CORP0 citations61
US11024356B2Jun 1, 2021
Apparatus for low power write and read operations for resistive memory
INTEL CORP0 citations61
US10068628B2Sep 4, 2018
Apparatus for low power write and read operations for resistive memory
INTEL CORP1 citations61
US12396155B2Aug 19, 2025
Backend memory with air gaps in upper metal layers
INTEL CORP0 citations60
US12599032B2Apr 7, 2026
Bilayer memory stacking with lines shared between bottom and top memory layers
INTEL CORP0 citations52
US11450669B2Sep 20, 2022
Stacked thin-film transistor based embedded dynamic random-access memory
INTEL CORP0 citations52
US6879531B2Apr 12, 2005
Reduced read delay for single-ended sensing
INTEL CORP1 citations52
US10438640B2Oct 8, 2019
Apparatus for low power write and read operations for resistive memory
INTEL CORP0 citations51
US9922691B2Mar 20, 2018
Resistive memory write circuitry with bit line drive strength based on storage cell line resistance
INTEL CORP1 citations51
US9805790B2Oct 31, 2017
Memory cell with retention using resistive memory
INTEL CORP1 citations51
US11652047B2May 16, 2023
Intermediate separation layers at the back-end-of-line
INTEL CORP0 citations50