Inventor
JONG YU-CHANG
TW45 patents
⚠️ This page may combine multiple inventors who share the name “JONG YU-CHANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
31 patentsUS9590053B2Mar 7, 2017
Methodology and structure for field plate design
TAIWAN SEMICONDUCTOR MFG CO LTD27 citations93
US9666574B1May 30, 2017
Semiconductor device structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10756208B2Aug 25, 2020
Integrated chip and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US10636904B2Apr 28, 2020
Methodology and structure for field plate design
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US9954097B2Apr 24, 2018
Methodology and structure for field plate design
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US11916115B2Feb 27, 2024
Field plate structure to enhance transistor breakdown voltage
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11121225B2Sep 14, 2021
Field plate structure to enhance transistor breakdown voltage
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11335784B2May 17, 2022
Field plate structure for high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11164970B2Nov 2, 2021
Contact field plate
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations72
US10964810B2Mar 30, 2021
Methodology and structure for field plate design
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10861946B1Dec 8, 2020
Field plate structure for high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10756079B2Aug 25, 2020
Methods for forming integrated circuit having guard rings
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US9748361B2Aug 29, 2017
Integrated circuits using guard rings for ESD systems, and methods for forming the integrated circuits
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US9634154B1Apr 25, 2017
Schottky diode having a well with peripherial cathod regions and center andoe region
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US12166108B2Dec 10, 2024
Strained transistor with conductive plate
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations69
US12426296B2Sep 23, 2025
High-voltage semiconductor devices and methods of formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12419088B2Sep 16, 2025
Semiconductor structure and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12369377B2Jul 22, 2025
Semiconductor structure and forming method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12302620B2May 13, 2025
Field plate structure to enhance transistor breakdown voltage
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12249629B2Mar 11, 2025
Field plate structure for high voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11271104B2Mar 8, 2022
Composite etch stop layer for contact field plate etching
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10319719B2Jun 11, 2019
Semiconductor device structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12349454B2Jul 1, 2025
Checkerboard dummy design for epitaxial open ratio
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11398467B2Jul 26, 2022
Methods for forming integrated circuit having guard rings
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12520521B2Jan 6, 2026
Method of forming high voltage transistor and structure resulting therefrom
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12396252B2Aug 19, 2025
Semiconductor structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10290714B2May 14, 2019
Transistor structure with field plate for reducing area thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12159870B2Dec 3, 2024
Semiconductor structure and forming method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US12132042B2Oct 29, 2024
Strap technology to improve ESD HBM performance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48
US12563812B2Feb 24, 2026
Composite gate dielectric for high-voltage device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations47
US11437466B2Sep 6, 2022
Avalanche-protected transistors using a bottom breakdown current path and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations45
TAIWAN SEMICONDUCTOR MFG
13 patentsUS7129559B2Oct 31, 2006
High voltage semiconductor device utilizing a deep trench structure
TAIWAN SEMICONDUCTOR MFG20 citations92
US8344416B2Jan 1, 2013
Integrated circuits using guard rings for ESD, systems, and methods for forming the integrated circuits
TAIWAN SEMICONDUCTOR MFG14 citations91
US7372083B2May 13, 2008
Embedded silicon-controlled rectifier (SCR) for HVPMOS ESD protection
TAIWAN SEMICONDUCTOR MFG13 citations84
US7081662B1Jul 25, 2006
ESD protection device for high voltage
TAIWAN SEMICONDUCTOR MFG11 citations84
US7521741B2Apr 21, 2009
Shielding structures for preventing leakages in high voltage MOS devices
TAIWAN SEMICONDUCTOR MFG9 citations82
US7808069B2Oct 5, 2010
Robust structure for HVPW Schottky diode
TAIWAN SEMICONDUCTOR MFG11 citations81
US7482662B2Jan 27, 2009
High voltage semiconductor device utilizing a deep trench structure
TAIWAN SEMICONDUCTOR MFG5 citations73
US6623911B1Sep 23, 2003
Method to form code marks on mask ROM products
TAIWAN SEMICONDUCTOR MFG9 citations72
US6943062B2Sep 13, 2005
Contaminant particle removal by optical tweezers
TAIWAN SEMICONDUCTOR MFG11 citations68
US7384802B2Jun 10, 2008
ESD protection device for high voltage
TAIWAN SEMICONDUCTOR MFG2 citations63
US8772092B2Jul 8, 2014
Integrated circuits using guard rings for ESD, systems, and methods for forming the integrated circuits
TAIWAN SEMICONDUCTOR MFG3 citations61
US8004038B2Aug 23, 2011
Suppression of hot-carrier effects using double well for thin gate oxide LDMOS embedded in HV process
TAIWAN SEMICONDUCTOR MFG2 citations51
US7608889B2Oct 27, 2009
Lateral diffusion metal-oxide-semiconductor structure
TAIWAN SEMICONDUCTOR MFG0 citations49