P

Inventor

PARK YOUNG-HOON

KR125 patents
⚠️ This page may combine multiple inventors who share the name “PARK YOUNG-HOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

27 patents
US5545578AAug 13, 1996

Method of maufacturing a semiconductor device having a low resistance gate electrode

SAMSUNG ELECTRONICS CO LTD121 citations97
US6566735B1May 20, 2003

Integrated circuit chip having anti-moisture-absorption film at edge thereof and method of forming anti-moisture-absorption film

SAMSUNG ELECTRONICS CO LTD38 citations95
US7057219B2Jun 6, 2006

CMOS image sensor and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD23 citations92
US7005689B2Feb 28, 2006

Image sensor and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD34 citations92
US6563162B2May 13, 2003

Semiconductor memory device for reducing parasitic bit line capacitance and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD40 citations92
US7338832B2Mar 4, 2008

CMOS image sensor and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD39 citations91
US6448113B2Sep 10, 2002

Method of forming fuse area structure including protection film on sidewall of fuse opening in semiconductor device

SAMSUNG ELECTRONICS CO LTD29 citations90
US6465895B1Oct 15, 2002

Bonding pad structures for semiconductor devices and fabrication methods thereof

SAMSUNG ELECTRONICS CO LTD39 citations88
US7598136B2Oct 6, 2009

Image sensor and related fabrication method

SAMSUNG ELECTRONICS CO LTD11 citations84
US7531857B2May 12, 2009

Image sensor with buried barrier layer having different thickness according to wavelength of light and method of forming the same

SAMSUNG ELECTRONICS CO LTD16 citations84
US7493713B2Feb 24, 2009

Image sensor and related method of fabrication

SAMSUNG ELECTRONICS CO LTD9 citations84
US7687837B2Mar 30, 2010

Image sensor and fabrication method thereof

SAMSUNG ELECTRONICS CO LTD8 citations83
US6509255B2Jan 21, 2003

Fuse area structure having guard ring surrounding fuse opening in semiconductor device and method of forming the same

SAMSUNG ELECTRONICS CO LTD14 citations83
US6507086B1Jan 14, 2003

Fuse area structure having guard ring surrounding fuse opening in semiconductor device and method of forming the same

SAMSUNG ELECTRONICS CO LTD14 citations83
US7545423B2Jun 9, 2009

Image sensor having a passivation layer exposing at least a main pixel array region and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD16 citations82
US7955924B2Jun 7, 2011

Image sensor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD8 citations81
US6555450B2Apr 29, 2003

Contact forming method for semiconductor device

SAMSUNG ELECTRONICS CO LTD13 citations81
US7579208B2Aug 25, 2009

Image sensor having self-aligned and overlapped photodiode and method of making same

SAMSUNG ELECTRONICS CO LTD7 citations74
US7342271B2Mar 11, 2008

CMOS image sensor providing uniform pixel exposure and method of fabricating same

SAMSUNG ELECTRONICS CO LTD5 citations74
US7180151B2Feb 20, 2007

Image sensor having self-aligned and overlapped photodiode and method of making same

SAMSUNG ELECTRONICS CO LTD9 citations74
US7566925B2Jul 28, 2009

Image sensor and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD6 citations73
US6696353B2Feb 24, 2004

Integrated circuit chip having anti-moisture-absorption film at edge thereof and method of forming anti-moisture-absorption film

SAMSUNG ELECTRONICS CO LTD11 citations73
US6509263B1Jan 21, 2003

Method for fabricating a semiconductor memory device having polysilicon with an enhanced surface concentration and reduced contact resistance

SAMSUNG ELECTRONICS CO LTD8 citations73
US6423589B2Jul 23, 2002

Methods for fabricating CMOS integrated circuits including source/drain compensating regions

SAMSUNG ELECTRONICS CO LTD10 citations73
US6274914B1Aug 14, 2001

CMOS integrated circuits including source/drain plug

SAMSUNG ELECTRONICS CO LTD7 citations73
US7932120B2Apr 26, 2011

Methods of manufacturing CMOS image sensors

SAMSUNG ELECTRONICS CO LTD6 citations71
US7531779B2May 12, 2009

CMOS image device having high light collection efficiency and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD6 citations71

CJ CHEILJEDANG CORP

7 patents

IPS LTD

5 patents

CNB TECHNOLOGY INC

2 patents

PARK YOUNG HOON

1 patent

JU JAE-YEONG

1 patent

KIM SO-YOUNG

1 patent

INTEGRATED PROCESS SYSTEMS LTD

1 patent

PARK WON-JE

1 patent

CJ CORP

1 patent

KOREA RES INST OF BIOSCIENCE

1 patent

KOREA INST SCI & TECH

1 patent

JUNG SANG-IL

1 patent

Showing the top 50 of 125 patents by PatentIndex Score.