Inventor
PINNOW CAY-UWE
DE20 patents
⚠️ This page may combine multiple inventors who share the name “PINNOW CAY-UWE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
12 patentsUS7405418B2Jul 29, 2008
Memory device electrode with a surface structure
INFINEON TECHNOLOGIES AG81 citations98
US7119395B2Oct 10, 2006
Memory cell with nanocrystals or nanodots
INFINEON TECHNOLOGIES AG34 citations92
US7483293B2Jan 27, 2009
Method for improving the thermal characteristics of semiconductor memory cells
INFINEON TECHNOLOGIES AG17 citations84
US7214587B2May 8, 2007
Method for fabricating a semiconductor memory cell
INFINEON TECHNOLOGIES AG14 citations84
US7514362B2Apr 7, 2009
Integrated circuit including sub-lithographic structures
INFINEON TECHNOLOGIES AG7 citations74
US7084454B2Aug 1, 2006
Nonvolatile integrated semiconductor memory
INFINEON TECHNOLOGIES AG9 citations74
US7348619B2Mar 25, 2008
Ferroelectric memory arrangement
INFINEON TECHNOLOGIES AG4 citations63
US7329561B2Feb 12, 2008
Fabricating memory components (PCRAMS) including memory cells based on a layer that changes phase state
INFINEON TECHNOLOGIES AG3 citations63
US7700398B2Apr 20, 2010
Method for fabricating an integrated device comprising a structure with a solid electrolyte
INFINEON TECHNOLOGIES AG3 citations62
US7442605B2Oct 28, 2008
Resistively switching memory
INFINEON TECHNOLOGIES AG2 citations62
US7358520B2Apr 15, 2008
Semiconductor memory cell, method for fabricating it and semiconductor memory device
INFINEON TECHNOLOGIES AG6 citations62
US7613028B2Nov 3, 2009
Solid electrolyte switching element
INFINEON TECHNOLOGIES AG0 citations52
QIMONDA AG
6 patentsUS7749805B2Jul 6, 2010
Method for manufacturing an integrated circuit including an electrolyte material layer
QIMONDA AG71 citations97
US7658773B2Feb 9, 2010
Method for fabricating a solid electrolyte memory device and solid electrolyte memory device
QIMONDA AG46 citations92
US7692175B2Apr 6, 2010
Reactive sputtering process for optimizing the thermal stability of thin chalcogenide layers
QIMONDA AG6 citations63
US7787279B2Aug 31, 2010
Integrated circuit having a resistive memory
QIMONDA AG6 citations62
US7772614B2Aug 10, 2010
Solid electrolyte memory element and method for fabricating such a memory element
QIMONDA AG4 citations62
US7732888B2Jun 8, 2010
Integrated circuit, method for manufacturing an integrated circuit, memory cell array, memory module, and device
QIMONDA AG1 citations52