Inventor

CHANG HEON YONG

KR46 patents

⚠️ This page may combine multiple inventors who share the name “CHANG HEON YONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHANG HEON YONG

HYNIX SEMICONDUCTOR INC

Method of manufacturing a phase change RAM device utilizing reduced phase change current

Phase change memory device having a bent heater and method for manufacturing the same

Phase change memory device having dielectric layer for isolating contact structure formed by growth, semiconductor device having the same, and methods for manufacturing the devices

Phase-change random access memory device and method for manufacturing the same

Phase-change memory device and method of manufacturing the same

Phase change memory device in which a phase change layer is stably formed and prevented from lifting and method for manufacturing the same

Reduced current phase-change memory device

Phase-change memory device and method of manufacturing the same

Phase-change memory device and method for manufacturing the same

Phase change memory device having carbon nano tube lower electrode material and method of manufacturing the same

Phase-change random access memory device and method for manufacturing the same

Phase change memory device having heat sinks formed under heaters and method for manufacturing the same

Phase change memory device to prevent thermal cross-talk and method for manufacturing the same

Phase change RAM device

Phase change memory device having decreased contact resistance of heater and method for manufacturing the same

Phase change memory device and method for manufacturing the same

Phase change memory device preventing contact loss and method for manufacturing the same

Phase change memory device having a uniform set and reset current

Phase change memory device with ensured sensing margin and method of manufacturing the same

Method for manufacturing phase change memory device using a patterning process

Phase change memory device in which a distance between a lower electrode and a ground line is increased to secure the sensing margin of a cell and method for manufacturing the same

Phase change memory device with reduced unit cell size and improved transistor current flow and method for manufacturing the same

Phase change memory device and method for manufacturing the same

Phase change RAM device and method for fabricating the same

Phase change memory device capable of increasing sensing margin and method for manufacturing the same

Phase change memory device resistant to stack pattern collapse and a method for manufacturing the same

Phase change memory device in which a distance between a lower electrode and a ground line is increased to secure the sensing margin of a cell and method for manufacturing the same

Phase-change memory device and method of manufacturing the same

Phase change memory device having a word line contact

Phase change memory device using PNP-BJT for preventing change in phase change layer composition and widening bit line sensing margin

Method for manufacturing phase change memory device which can stably form an interface between a lower electrode and a phase change layer

Phase change RAM device with increased contact area between word line and active area

CHANG HEON YONG

Phase change memory device having dielectric layer for isolating contact structure formed by growth, semiconductor device having the same, and methods for manufacturing the devices

Phase change memory device having a bent heater and method for manufacturing the same

Phase change memory device to prevent thermal cross-talk and method for manufacturing the same

Phase change memory device and method for manufacturing the same

Phase change memory device in which a phase change layer is stably formed and prevented from lifting and method for manufacturing the same

Phase change memory device resistant to stack pattern collapse and a method for manufacturing the same

Phase change memory device resistant to stack pattern collapse and a method for manufacturing the same

Method for manufacturing phase change memory device

Phase change memory device accounting for volume change of phase change material and method for manufacturing the same

Phase change memory device and method for manufacturing the same

Phase change memory device capable of increasing sensing margin and method for manufacturing the same

Phase change memory device accounting for volume change of phase change material and method for manufacturing the same

Phase change RAM device and method for manufacturing the same

SK HYNIX INC

Semiconductor wafer including chip guard