Inventor
TRAN KHANH
US48 patents
⚠️ This page may combine multiple inventors who share the name “TRAN KHANH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
22 patentsUS6351013B1Feb 26, 2002
Low-K sub spacer pocket formation for gate capacitance reduction
ADVANCED MICRO DEVICES INC245 citations99
US6093635AJul 25, 2000
High integrity borderless vias with HSQ gap filled patterned conductive layers
ADVANCED MICRO DEVICES INC27 citations93
US6087724AJul 11, 2000
HSQ with high plasma etching resistance surface for borderless vias
ADVANCED MICRO DEVICES INC25 citations93
US5582881ADec 10, 1996
Process for deposition of a Ti/TiN cap layer on aluminum metallization and apparatus
ADVANCED MICRO DEVICES INC24 citations93
US6522013B1Feb 18, 2003
Punch-through via with conformal barrier liner
ADVANCED MICRO DEVICES INC44 citations92
US6060384AMay 9, 2000
Borderless vias with HSQ gap filled patterned metal layers
ADVANCED MICRO DEVICES INC30 citations92
US5925932AJul 20, 1999
Borderless vias
ADVANCED MICRO DEVICES INC20 citations92
US5866945AFeb 2, 1999
Borderless vias with HSQ gap filled patterned metal layers
ADVANCED MICRO DEVICES INC35 citations92
US6133142AOct 17, 2000
Lower metal feature profile with overhanging ARC layer to improve robustness of borderless vias
ADVANCED MICRO DEVICES INC23 citations90
US6008116ADec 28, 1999
Selective etching for improved dielectric interlayer planarization
ADVANCED MICRO DEVICES INC17 citations84
US6232221B1May 15, 2001
Borderless vias
ADVANCED MICRO DEVICES INC12 citations74
US6194328B1Feb 27, 2001
H2 diffusion barrier formation by nitrogen incorporation in oxide layer
ADVANCED MICRO DEVICES INC14 citations74
US6100179AAug 8, 2000
Electromigration resistant patterned metal layer gap filled with HSQ
ADVANCED MICRO DEVICES INC7 citations74
US6083851AJul 4, 2000
HSQ with high plasma etching resistance surface for borderless vias
ADVANCED MICRO DEVICES INC15 citations74
US6043147AMar 28, 2000
Method of prevention of degradation of low dielectric constant gap-fill material
ADVANCED MICRO DEVICES INC11 citations74
US6034420AMar 7, 2000
Electromigration resistant patterned metal layer gap filled with HSQ
ADVANCED MICRO DEVICES INC7 citations74
US6030891AFeb 29, 2000
Vacuum baked HSQ gap fill layer for high integrity borderless vias
ADVANCED MICRO DEVICES INC12 citations74
US5990558ANov 23, 1999
Reduced cracking in gap filling dielectrics
ADVANCED MICRO DEVICES INC15 citations74
US5973387AOct 26, 1999
Tapered isolated metal profile to reduce dielectric layer cracking
ADVANCED MICRO DEVICES INC7 citations73
US6329718B1Dec 11, 2001
Method for reducing stress-induced voids for 0.25mμ and smaller semiconductor chip technology by annealing interconnect lines and using low bias voltage and low interlayer dielectric deposition rate and semiconductor chip made thereby
ADVANCED MICRO DEVICES INC12 citations72
US6492258B1Dec 10, 2002
METHOD FOR REDUCING STRESS-INDUCED VOIDS FOR 0.25-μM AND SMALLER SEMICONDUCTOR CHIP TECHNOLOGY BY ANNEALING INTERCONNECT LINES AND USING LOW BIAS VOLTAGE AND LOW INTERLAYER DIELECTRIC DEPOSITION RATE AND SEMICONDUCTOR CHIP MADE THEREBY
ADVANCED MICRO DEVICES INC3 citations61
US6472751B1Oct 29, 2002
H2 diffusion barrier formation by nitrogen incorporation in oxide layer
ADVANCED MICRO DEVICES INC0 citations52
MAXIM INTEGRATED PRODUCTS
10 patentsUS6607962B2Aug 19, 2003
Globally planarized backend compatible thin film resistor contact/interconnect process
MAXIM INTEGRATED PRODUCTS19 citations90
US9704809B2Jul 11, 2017
Fan-out and heterogeneous packaging of electronic components
MAXIM INTEGRATED PRODUCTS7 citations84
US9608130B2Mar 28, 2017
Semiconductor device having trench capacitor structure integrated therein
MAXIM INTEGRATED PRODUCTS14 citations82
US9520462B1Dec 13, 2016
Semiconductor device having capacitor integrated therein
MAXIM INTEGRATED PRODUCTS7 citations82
US9196672B2Nov 24, 2015
Semiconductor device having capacitor integrated therein
MAXIM INTEGRATED PRODUCTS14 citations82
US7943473B2May 17, 2011
Minimum cost method for forming high density passive capacitors for replacement of discrete board capacitors using a minimum cost 3D wafer-to-wafer modular integration scheme
MAXIM INTEGRATED PRODUCTS15 citations81
US10211172B2Feb 19, 2019
Wafer-based electronic component packaging
MAXIM INTEGRATED PRODUCTS5 citations71
US10056294B2Aug 21, 2018
Techniques for adhesive control between a substrate and a die
MAXIM INTEGRATED PRODUCTS3 citations68
US8344478B2Jan 1, 2013
Inductors having inductor axis parallel to substrate surface
MAXIM INTEGRATED PRODUCTS3 citations62
US9882075B2Jan 30, 2018
Light sensor with vertical diode junctions
MAXIM INTEGRATED PRODUCTS0 citations41