Inventor
TOKRANOV ANTON V
US3 patents
Patents
3 patentsUS12532514B2Jan 20, 2026
Semiconductor structure with isolation region including combination of deep and shallow trench isolation structures and method
GLOBALFOUNDRIES US INC0 citations52
US11205648B2Dec 21, 2021
IC structure with single active region having different doping profile than set of active regions
GLOBALFOUNDRIES US INC1 citations51
US12433014B2Sep 30, 2025
Structure having different gate dielectric widths in different regions of substrate
GLOBALFOUNDRIES US INC0 citations41