Inventor
PARK JOO-SUNG
KR36 patents
⚠️ This page may combine multiple inventors who share the name “PARK JOO-SUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
30 patentsUS6218283B1Apr 17, 2001
Method of fabricating a multi-layered wiring system of a semiconductor device
SAMSUNG ELECTRONICS CO LTD45 citations87
US9929890B2Mar 27, 2018
Method for determining reserved tones and transmitter for performing PAPR reduction using tone reservation
SAMSUNG ELECTRONICS CO LTD7 citations84
US7948249B2May 24, 2011
Semiconductor chip having a crack test circuit and method of testing a crack of a semiconductor chip using the same
SAMSUNG ELECTRONICS CO LTD14 citations84
US7863917B2Jan 4, 2011
Semiconductor chip having a crack test circuit and method of testing a crack of a semiconductor chip using the same
SAMSUNG ELECTRONICS CO LTD6 citations74
US11329852B2May 10, 2022
Method for determining reserved tones and transmitter for performing PAPR reduction using tone reservation
SAMSUNG ELECTRONICS CO LTD2 citations73
US11115254B2Sep 7, 2021
Method for determining reserved tones and transmitter for performing PAPR reduction using tone reservation
SAMSUNG ELECTRONICS CO LTD1 citations73
US10805134B2Oct 13, 2020
Method for determining reserved tones and transmitter for performing PAPR reduction using tone reservation
SAMSUNG ELECTRONICS CO LTD3 citations73
US10797925B2Oct 6, 2020
Method for determining reserved tones and transmitter for performing PAPR reduction using tone reservation
SAMSUNG ELECTRONICS CO LTD1 citations73
US10469300B2Nov 5, 2019
Method for determining reserved tones and transmitter for performing PAPR reduction using tone reservation
SAMSUNG ELECTRONICS CO LTD2 citations73
US10461977B2Oct 29, 2019
Method for determining reserved tones and transmitter for performing PAPR reduction using tone reservation
SAMSUNG ELECTRONICS CO LTD1 citations73
US10164812B2Dec 25, 2018
Method for determining reserved tones and transmitter for performing PAPR reduction using tone reservation
SAMSUNG ELECTRONICS CO LTD2 citations73
US9935808B2Apr 3, 2018
Method for determining reserved tones and transmitter for performing PAPR reduction using tone reservation
SAMSUNG ELECTRONICS CO LTD3 citations73
US9565044B2Feb 7, 2017
Transmitting apparatus, receiving apparatus, and control methods thereof
SAMSUNG ELECTRONICS CO LTD6 citations73
US9300376B2Mar 29, 2016
Transmitting apparatus, receiving apparatus, and control methods thereof
SAMSUNG ELECTRONICS CO LTD3 citations73
US9276654B2Mar 1, 2016
Transmitter and signal transmitting method thereof
SAMSUNG ELECTRONICS CO LTD3 citations73
US7145196B2Dec 5, 2006
Asymmetric field effect transistor
SAMSUNG ELECTRONICS CO LTD10 citations73
US6927119B2Aug 9, 2005
Semiconductor device having landing pad and fabrication method thereof
SAMSUNG ELECTRONICS CO LTD5 citations73
US10382059B2Aug 13, 2019
Transmitting apparatus, encoding method thereof, receiving apparatus, and decoding method thereof
SAMSUNG ELECTRONICS CO LTD5 citations72
US10698102B2Jun 30, 2020
Method and apparatus for reading code using short-range millimeter wave (mmWave) radar
SAMSUNG ELECTRONICS CO LTD2 citations69
US11700160B2Jul 11, 2023
Method for determining reserved tones and transmitter for performing parr reduction using tone reservation
SAMSUNG ELECTRONICS CO LTD0 citations62
US11601316B2Mar 7, 2023
Method for determining reserved tones and transmitter for performing PAPR reduction using tone reservation
SAMSUNG ELECTRONICS CO LTD0 citations62
US7439102B2Oct 21, 2008
Semiconductor fuse box and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US7573142B2Aug 11, 2009
Alignment key structure in a semiconductor device and method of forming the same
SAMSUNG ELECTRONICS CO LTD5 citations61
US7795731B2Sep 14, 2010
Semiconductor devices including a topmost metal layer with at least one opening and their methods of fabrication
SAMSUNG ELECTRONICS CO LTD3 citations56
US10164811B2Dec 25, 2018
Method for determining reserved tones and transmitter for performing PAPR reduction using tone reservation
SAMSUNG ELECTRONICS CO LTD0 citations52
US7750432B2Jul 6, 2010
Semiconductor fuse box and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US7442613B2Oct 28, 2008
Methods of forming an asymmetric field effect transistor
SAMSUNG ELECTRONICS CO LTD1 citations51
US7385242B2Jun 10, 2008
Semiconductor device having landing pad and fabrication method thereof
SAMSUNG ELECTRONICS CO LTD0 citations51
US7154160B2Dec 26, 2006
Semiconductor fuse box and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US10228458B2Mar 12, 2019
Method and apparatus for reading code using short-range millimeter wave (MMWAVE) radar
SAMSUNG ELECTRONICS CO LTD0 citations48
PARK JOO-SUNG
4 patentsUS8697579B2Apr 15, 2014
Method of forming an isolation structure and method of forming a semiconductor device
PARK JOO-SUNG5 citations71
US8334574B2Dec 18, 2012
Semiconductor contact structure and method of fabricating the same
PARK JOO-SUNG1 citations50
US8501617B2Aug 6, 2013
Semiconductor devices including a topmost metal layer with at least one opening and their methods of fabrication
PARK JOO-SUNG0 citations45
US8198163B2Jun 12, 2012
Method of fabricating semiconductor device
PARK JOO-SUNG0 citations39