Inventor
HAMAJIMA TOMOHIRO
JP14 patents
⚠️ This page may combine multiple inventors who share the name “HAMAJIMA TOMOHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NEC CORP
10 patentsUS6096433AAug 1, 2000
Laminated substrate fabricated from semiconductor wafers bonded to each other without contact between insulating layer and semiconductor layer and process of fabrication thereof
NEC CORP57 citations96
US5985681ANov 16, 1999
Method of producing bonded substrate with silicon-on-insulator structure
NEC CORP64 citations96
US5869386AFeb 9, 1999
Method of fabricating a composite silicon-on-insulator substrate
NEC CORP53 citations96
US6013954AJan 11, 2000
Semiconductor wafer having distortion-free alignment regions
NEC CORP31 citations92
US6004406ADec 21, 1999
Silicon on insulating substrate
NEC CORP24 citations92
US5773352AJun 30, 1998
Fabrication process of bonded total dielectric isolation substrate
NEC CORP30 citations92
US6346435B1Feb 12, 2002
Laminated substrate fabricated from semiconductor wafers bonded to each other without contact between insulating layer and semiconductor layer and process of fabrication thereof
NEC CORP7 citations74
US5847438ADec 8, 1998
Bonded IC substrate with a high breakdown voltage and large current capabilities
NEC CORP14 citations74
US5691231ANov 25, 1997
Method of manufacturing silicon on insulating substrate
NEC CORP13 citations74
US5969401AOct 19, 1999
Silicon on insulator substrate with improved insulation patterns
NEC CORP7 citations73