Inventor

PARK BYUNG-JUN

KR91 patents

⚠️ This page may combine multiple inventors who share the name “PARK BYUNG-JUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PARK BYUNG-JUN

SAMSUNG ELECTRONICS CO LTD

Image sensor having improved sensitivity and decreased crosstalk and method of fabricating same

Method for fabricating semiconductor device, and semiconductor device, having storage node contact flugs

Method for fabricating DRAM cell using a protection layer

Method of manufacturing a semiconductor device having selective epitaxial silicon layer on contact pads

Semiconductor memory devices using sidewall spacers

Method for fabricating semiconductor device, and semiconductor device, having storage node contact plugs

Semiconductor device having a self-aligned contact structure and methods of forming the same

Semiconductor device having a self-aligned contact structure and methods of forming the same

Capacitor for a semiconductor memory device

Methods of forming integrated circuit devices including cylindrical capacitors having supporters between lower electrodes

DRAM cell capacitor and manufacturing method thereof

Method of manufacturing DRAM device invention

Method for maximizing gain of received signal in a multimedia broadcast/multicast service system

Unit pixels, image sensor containing unit pixels, and method of fabricating unit pixels

Channel estimation method in a MIMO wireless communication system

Image sensor having improved sensitivity and method of manufacturing the same

Image sensor and method of manufacturing the same

Apparatus and method for locating user equipment using global positioning system and dead reckoning

Methods of forming transistor structures including separate anti-punchthrough layers

Semiconductor memory device and method for manufacturing the same

Method of fabricating a DRAM semiconductor device

Method for forming self-aligned contact

Image sensor

Via structures including etch-delay structures and semiconductor devices having via plugs

Electronic devices including multiple semiconductor layers

Semiconductor memory device and method for manufacturing the same

Method of fabricating integrated circuit having self-aligned metal contact structure

DRAM cell having electrode with protection layer

Integrated circuit devices having through-silicon via structures

Stack type image sensor

DRAM cell capacitor and manufacturing method thereof

Via structures including etch-delay structures and semiconductor devices having via plugs

Image sensor and a method of fabricating the same

Method of manufacturing a CMOS image sensor

Semiconductor device preventing electrical short and method of manufacturing the same

CMOS image sensor and manufacturing method thereof

CMOS image sensors for preventing optical crosstalk

PARK BYUNG-JUN

Methods of forming a through via structure

CMOS image sensors and related devices and fabrication methods

Methods of manufacturing an image sensor having an air gap

Through via structure, methods of forming the same

Image sensor, substrate for the same, image sensing device including the image sensor, and associated methods

Methods of fabricating CMOS image sensors

Image sensor devices including electrically conductive reflectors

PARK BYUNG JUN

Image sensor and method of fabricating the same

Image sensor and method of fabricating the same

Compositions for preventing or treating diseases or disorders associated with neuro-inflammation, neuro-apoptosis, or neuro-oxidative damage and uses thereof

Image sensor and method of fabricating the same

ACQUTEK SEMICONDUCTOR & TECH

Substrate for manufacturing a semiconductor device with three element alloy

INTEKPLUS CO LTD

Apparatus and method for measuring fluorescence lifetime