P

Inventor

LEE JONG-MYEONG

KR60 patents
⚠️ This page may combine multiple inventors who share the name “LEE JONG-MYEONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

34 patents
US6391769B1May 21, 2002

Method for forming metal interconnection in semiconductor device and interconnection structure fabricated thereby

SAMSUNG ELECTRONICS CO LTD177 citations99
US7081409B2Jul 25, 2006

Methods of producing integrated circuit devices utilizing tantalum amine derivatives

SAMSUNG ELECTRONICS CO LTD50 citations96
US6787468B2Sep 7, 2004

Method of fabricating metal lines in a semiconductor device

SAMSUNG ELECTRONICS CO LTD40 citations93
US6432820B1Aug 13, 2002

Method of selectively depositing a metal layer in an opening in a dielectric layer by forming a metal-deposition-prevention layer around the opening of the dielectric layer

SAMSUNG ELECTRONICS CO LTD43 citations93
US6849555B2Feb 1, 2005

Wafer processing apparatus and wafer processing method using the same

SAMSUNG ELECTRONICS CO LTD15 citations92
US6586340B2Jul 1, 2003

Wafer processing apparatus and wafer processing method using the same

SAMSUNG ELECTRONICS CO LTD19 citations92
US7842600B2Nov 30, 2010

Methods of forming interlayer dielectrics having air gaps

SAMSUNG ELECTRONICS CO LTD19 citations84
US7833855B2Nov 16, 2010

Methods of producing integrated circuit devices utilizing tantalum amine derivatives

SAMSUNG ELECTRONICS CO LTD10 citations84
US7452811B2Nov 18, 2008

Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same

SAMSUNG ELECTRONICS CO LTD10 citations84
US6964922B2Nov 15, 2005

Methods for forming metal interconnections for semiconductor devices having multiple metal depositions

SAMSUNG ELECTRONICS CO LTD13 citations84
US6602782B2Aug 5, 2003

Methods for forming metal wiring layers and metal interconnects and metal interconnects formed thereby

SAMSUNG ELECTRONICS CO LTD18 citations84
US9627469B2Apr 18, 2017

Oxide film, integrated circuit device, and methods of forming the same

SAMSUNG ELECTRONICS CO LTD7 citations83
US7521357B2Apr 21, 2009

Methods of forming metal wiring in semiconductor devices using etch stop layers

SAMSUNG ELECTRONICS CO LTD7 citations74
US7279416B2Oct 9, 2007

Methods of forming a conductive structure in an integrated circuit device

SAMSUNG ELECTRONICS CO LTD7 citations74
US7189641B2Mar 13, 2007

Methods of fabricating tungsten contacts with tungsten nitride barrier layers in semiconductor devices, tungsten contacts with tungsten nitride barrier layers

SAMSUNG ELECTRONICS CO LTD8 citations74
US9520460B2Dec 13, 2016

MIM capacitors with diffusion-blocking electrode structures and semiconductor devices including the same

SAMSUNG ELECTRONICS CO LTD6 citations73
US7105444B2Sep 12, 2006

Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same

SAMSUNG ELECTRONICS CO LTD6 citations73
US6955983B2Oct 18, 2005

Methods of forming metal interconnections of semiconductor devices by treating a barrier metal layer

SAMSUNG ELECTRONICS CO LTD9 citations73
US6673718B1Jan 6, 2004

Methods for forming aluminum metal wirings

SAMSUNG ELECTRONICS CO LTD12 citations73
US6905960B2Jun 14, 2005

Method of forming a contact in a semiconductor device

SAMSUNG ELECTRONICS CO LTD9 citations72
US6844627B2Jan 18, 2005

Metal film semiconductor device and a method for forming the same

SAMSUNG ELECTRONICS CO LTD7 citations72
US9543196B2Jan 10, 2017

Methods of fabricating semiconductor devices using nanowires

SAMSUNG ELECTRONICS CO LTD2 citations71
US8053374B2Nov 8, 2011

Method of manufacturing a metal wiring structure

SAMSUNG ELECTRONICS CO LTD3 citations63
US7816255B2Oct 19, 2010

Methods of forming a semiconductor device including a diffusion barrier film

SAMSUNG ELECTRONICS CO LTD6 citations63
US7807571B2Oct 5, 2010

Semiconductor device and methods of forming the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US7067417B2Jun 27, 2006

Methods of removing resistive remnants from contact holes using silicidation

SAMSUNG ELECTRONICS CO LTD2 citations63
US6699790B2Mar 2, 2004

Semiconductor device fabrication method for filling high aspect ratio openings in insulators with aluminum

SAMSUNG ELECTRONICS CO LTD5 citations63
US7211769B2May 1, 2007

Heating chamber and method of heating a wafer

SAMSUNG ELECTRONICS CO LTD2 citations62
US8867882B2Oct 21, 2014

Optical input/output device for photo-electric integrated circuit device and method of fabricating same

SAMSUNG ELECTRONICS CO LTD1 citations52
US8569862B2Oct 29, 2013

Integrated circuit devices with crack-resistant fuse structures

SAMSUNG ELECTRONICS CO LTD0 citations52
US8044490B2Oct 25, 2011

Semiconductor device including fuse

SAMSUNG ELECTRONICS CO LTD1 citations52
US7972941B2Jul 5, 2011

Method of manufacturing a semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations52
US7547632B2Jun 16, 2009

Methods of forming metal layers in the fabrication of semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations52
US9754826B2Sep 5, 2017

Semiconductor devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations51

PARK JIN-HO

3 patents

CHOI KYUNG-IN

2 patents

KANG PIL-KYU

2 patents

KIM SU-KYOUNG

1 patent

HONG JONG-WON

1 patent

BAEK JONG-MIN

1 patent

KIM HEI-SEUNG

1 patent

LIM DONG-CHAN

1 patent

KOREA RES INST CHEMICAL TECH

1 patent

LEE JONG-MYEONG

1 patent

LEE WOO-JIN

1 patent

AHN SANG-HOON

1 patent

Showing the top 50 of 60 patents by PatentIndex Score.