Inventor
LEE JONG-MYEONG
KR60 patents
⚠️ This page may combine multiple inventors who share the name “LEE JONG-MYEONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
34 patentsUS6391769B1May 21, 2002
Method for forming metal interconnection in semiconductor device and interconnection structure fabricated thereby
SAMSUNG ELECTRONICS CO LTD177 citations99
US7081409B2Jul 25, 2006
Methods of producing integrated circuit devices utilizing tantalum amine derivatives
SAMSUNG ELECTRONICS CO LTD50 citations96
US6787468B2Sep 7, 2004
Method of fabricating metal lines in a semiconductor device
SAMSUNG ELECTRONICS CO LTD40 citations93
US6432820B1Aug 13, 2002
Method of selectively depositing a metal layer in an opening in a dielectric layer by forming a metal-deposition-prevention layer around the opening of the dielectric layer
SAMSUNG ELECTRONICS CO LTD43 citations93
US6849555B2Feb 1, 2005
Wafer processing apparatus and wafer processing method using the same
SAMSUNG ELECTRONICS CO LTD15 citations92
US6586340B2Jul 1, 2003
Wafer processing apparatus and wafer processing method using the same
SAMSUNG ELECTRONICS CO LTD19 citations92
US7842600B2Nov 30, 2010
Methods of forming interlayer dielectrics having air gaps
SAMSUNG ELECTRONICS CO LTD19 citations84
US7833855B2Nov 16, 2010
Methods of producing integrated circuit devices utilizing tantalum amine derivatives
SAMSUNG ELECTRONICS CO LTD10 citations84
US7452811B2Nov 18, 2008
Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same
SAMSUNG ELECTRONICS CO LTD10 citations84
US6964922B2Nov 15, 2005
Methods for forming metal interconnections for semiconductor devices having multiple metal depositions
SAMSUNG ELECTRONICS CO LTD13 citations84
US6602782B2Aug 5, 2003
Methods for forming metal wiring layers and metal interconnects and metal interconnects formed thereby
SAMSUNG ELECTRONICS CO LTD18 citations84
US9627469B2Apr 18, 2017
Oxide film, integrated circuit device, and methods of forming the same
SAMSUNG ELECTRONICS CO LTD7 citations83
US7521357B2Apr 21, 2009
Methods of forming metal wiring in semiconductor devices using etch stop layers
SAMSUNG ELECTRONICS CO LTD7 citations74
US7279416B2Oct 9, 2007
Methods of forming a conductive structure in an integrated circuit device
SAMSUNG ELECTRONICS CO LTD7 citations74
US7189641B2Mar 13, 2007
Methods of fabricating tungsten contacts with tungsten nitride barrier layers in semiconductor devices, tungsten contacts with tungsten nitride barrier layers
SAMSUNG ELECTRONICS CO LTD8 citations74
US9520460B2Dec 13, 2016
MIM capacitors with diffusion-blocking electrode structures and semiconductor devices including the same
SAMSUNG ELECTRONICS CO LTD6 citations73
US7105444B2Sep 12, 2006
Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same
SAMSUNG ELECTRONICS CO LTD6 citations73
US6955983B2Oct 18, 2005
Methods of forming metal interconnections of semiconductor devices by treating a barrier metal layer
SAMSUNG ELECTRONICS CO LTD9 citations73
US6673718B1Jan 6, 2004
Methods for forming aluminum metal wirings
SAMSUNG ELECTRONICS CO LTD12 citations73
US6905960B2Jun 14, 2005
Method of forming a contact in a semiconductor device
SAMSUNG ELECTRONICS CO LTD9 citations72
US6844627B2Jan 18, 2005
Metal film semiconductor device and a method for forming the same
SAMSUNG ELECTRONICS CO LTD7 citations72
US9543196B2Jan 10, 2017
Methods of fabricating semiconductor devices using nanowires
SAMSUNG ELECTRONICS CO LTD2 citations71
US8053374B2Nov 8, 2011
Method of manufacturing a metal wiring structure
SAMSUNG ELECTRONICS CO LTD3 citations63
US7816255B2Oct 19, 2010
Methods of forming a semiconductor device including a diffusion barrier film
SAMSUNG ELECTRONICS CO LTD6 citations63
US7807571B2Oct 5, 2010
Semiconductor device and methods of forming the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7067417B2Jun 27, 2006
Methods of removing resistive remnants from contact holes using silicidation
SAMSUNG ELECTRONICS CO LTD2 citations63
US6699790B2Mar 2, 2004
Semiconductor device fabrication method for filling high aspect ratio openings in insulators with aluminum
SAMSUNG ELECTRONICS CO LTD5 citations63
US7211769B2May 1, 2007
Heating chamber and method of heating a wafer
SAMSUNG ELECTRONICS CO LTD2 citations62
US8867882B2Oct 21, 2014
Optical input/output device for photo-electric integrated circuit device and method of fabricating same
SAMSUNG ELECTRONICS CO LTD1 citations52
US8569862B2Oct 29, 2013
Integrated circuit devices with crack-resistant fuse structures
SAMSUNG ELECTRONICS CO LTD0 citations52
US8044490B2Oct 25, 2011
Semiconductor device including fuse
SAMSUNG ELECTRONICS CO LTD1 citations52
US7972941B2Jul 5, 2011
Method of manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations52
US7547632B2Jun 16, 2009
Methods of forming metal layers in the fabrication of semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations52
US9754826B2Sep 5, 2017
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations51
PARK JIN-HO
3 patentsCHOI KYUNG-IN
2 patentsKANG PIL-KYU
2 patentsUS8422845B2Apr 16, 2013
Optical input/output device for photo-electric integrated circuit device and method of fabricating same
KANG PIL-KYU4 citations62
US8735265B2May 27, 2014
Methods of selectively forming silicon-on-insulator structures using selective expitaxial growth process
KANG PIL-KYU0 citations52
KIM SU-KYOUNG
1 patentHONG JONG-WON
1 patentBAEK JONG-MIN
1 patentKIM HEI-SEUNG
1 patentLIM DONG-CHAN
1 patentKOREA RES INST CHEMICAL TECH
1 patentLEE JONG-MYEONG
1 patentLEE WOO-JIN
1 patentAHN SANG-HOON
1 patentShowing the top 50 of 60 patents by PatentIndex Score.