Inventor
YEN YU-CHAN
TW17 patents
⚠️ This page may combine multiple inventors who share the name “YEN YU-CHAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
14 patentsUS9412656B2Aug 9, 2016
Reverse tone self-aligned contact
TAIWAN SEMICONDUCTOR MFG CO LTD23 citations92
US10998228B2May 4, 2021
Self-aligned interconnect with protection layer
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US9633907B2Apr 25, 2017
Self-aligned nanowire formation using double patterning
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US9412614B2Aug 9, 2016
Nano wire structure and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US12009258B2Jun 11, 2024
Self-aligned interconnect with protection layer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10879129B2Dec 29, 2020
Self-aligned nanowire formation using double patterning
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9812536B2Nov 7, 2017
Reverse tone self-aligned contact
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9570358B2Feb 14, 2017
Nano wire structure and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10163723B2Dec 25, 2018
Self-aligned nanowire formation using double patterning
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9741621B2Aug 22, 2017
Nano wire structure and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11127837B2Sep 21, 2021
Method of forming MOSFET structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10504792B2Dec 10, 2019
Self-aligned nanowire formation using double patterning
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10461170B2Oct 29, 2019
Method of forming MOSFET structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9911661B2Mar 6, 2018
Nano wire structure and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52