Inventor · disambiguated record
Chao-Chen Cheng
Also filed as: CHENG CHAO-CHEN
36 granted patents·6 pending applications·332 citations·filing 1996–2023
97Inventor score
Files withSEMILEDS OPTOELECTRONICS CO10CHU CHEN-FU9FAN FENG-HSU4SEMILEDS OPTOELECTRONICS CO LT4SHENZHEN LIGHTING INST3
Top patents by PatentIndex Score
42 records- 0197US8871547B2Method for fabricating vertical light emitting diode (VLED) structure using a laser pulse to remove a carrier substrateSEMILEDS OPTOELECTRONICS CO·Filed 2014·Granted Oct 28, 2014·23 cites·17 claims
- 0297US7723718B1Epitaxial structure for metal devicesSEMILEDS OPTOELECTRONICS CO LT·Filed 2006·Granted May 25, 2010·29 cites·33 claims
- 0396US7897420B2Light emitting diodes (LEDs) with improved light extraction by rougheningSEMILEDS OPTOELECTRONICS CO·Filed 2007·Granted Mar 1, 2011·35 cites·16 claims
- 0496US7687322B1Method for removing semiconductor street materialSEMILEDS OPTOELECTRONICS CO LT·Filed 2006·Granted Mar 30, 2010·22 cites·25 claims
- 0596US7524686B2Method of making light emitting diodes (LEDs) with improved light extraction by rougheningSEMILEDS CORP·Filed 2007·Granted Apr 28, 2009·48 cites·19 claims
- 0693US7759670B2Vertical LED with current guiding structureSEMILEDS OPTOELECTRONICS CO LT·Filed 2008·Granted Jul 20, 2010·24 cites·16 claims
- 0792US8685764B2Method to make low resistance contactCHU CHEN-FU·Filed 2007·Granted Apr 1, 2014·24 cites·12 claims
- 0890US8003994B2Vertical LED with current guiding structureSEMILEDS OPTOELECTRONICS CO·Filed 2010·Granted Aug 23, 2011·10 cites·27 claims
- 0989US8143112B1Method for removing semiconductor street materialDOAN TRUNG TRI·Filed 2010·Granted Mar 27, 2012·6 cites·25 claims
- 1086US8124454B1Die separationCHU CHEN-FU·Filed 2006·Granted Feb 28, 2012·6 cites·20 claims
- 1180USD627747SLight emitting diode deviceSEMI LEDS OPTOELECTRONICS CO L·Filed 2010·Granted Nov 23, 2010·27 cites·1 claims
- 1279US8686461B2Light emitting diode (LED) die having stepped substrates and method of fabricationCHU JIUNN-YI·Filed 2011·Granted Apr 1, 2014·5 cites·12 claims
- 1379US7829440B2Method of separating semiconductor diesSEMILEDS OPTOELECTRONICS CO LT·Filed 2007·Granted Nov 9, 2010·6 cites·46 claims
- 1474US8546818B2Vertical LED with current-guiding structureLIU WEN-HUANG·Filed 2012·Granted Oct 1, 2013·3 cites·9 claims
- 1570US9343620B2Method for fabricating a light emitting diode (LED) die having protective substrateSEMILEDS OPTOELECTRONICS CO·Filed 2014·Granted May 17, 2016·2 cites·14 claims
- 1667US8614449B1Protection for the epitaxial structure of metal devicesFAN FENG-HSU·Filed 2006·Granted Dec 24, 2013·2 cites·29 claims
- 1763US8703515B2Method for guiding current in a light emitting diode (LED) deviceSEMILEDS OPTOELECTRONICS CO·Filed 2013·Granted Apr 22, 2014·1 cites·8 claims
- 1862US8148733B2Vertical LED with current guiding structureLIU WEN-HUANG·Filed 2011·Granted Apr 3, 2012·1 cites·21 claims
- 1961US2014051197A1Method for fabricating a vertical light emitting diode (vled) die having epitaxial structure with protective layerSEMILEDS OPTOELECTRONICS CO·Filed 2013·Application pending·0 cites
- 2059USD684940SLED chipCHU CHEN-FU·Filed 2012·Granted Jun 25, 2013·10 cites·1 claims
- 2157USD684549SLED chipCHU CHEN-FU·Filed 2012·Granted Jun 18, 2013·9 cites·1 claims
- 2256US8466479B2Light emitting diodes (LEDs) with improved light extraction by rougheningCHU CHEN-FU·Filed 2011·Granted Jun 18, 2013·0 cites·20 claims
- 2354US12132294B2Manufacturing method for laser chip and laser chipSHENZHEN LIGHTING INST·Filed 2019·Granted Oct 29, 2024·0 cites·10 claims
- 2454US5714285AUsing (LaNiO3)X (TiO2)1-x oxide absorption composite for attenuating phase shifting blanks and masksTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Feb 3, 1998·15 cites·14 claims
- 2554US2023187901A1Epitaxial structure and semiconductor chip applying sameSHENZHEN LIGHTING INST·Filed 2023·Application pending·0 cites
- 2651US2012074384A1Protection for the epitaxial structure of metal devicesFAN FENG-HSU·Filed 2011·Application pending·0 cites
- 2750USD689834SLED chipCHU CHEN-FU·Filed 2012·Granted Sep 17, 2013·7 cites·1 claims
- 2850US7892891B2Die separationSEMILEDS OPTOELECTRONICS CO·Filed 2006·Granted Feb 22, 2011·0 cites·21 claims
- 2949US9130114B2Vertical light emitting diode (VLED) dice having confinement layers with roughened surfaces and methods of fabricationSEMILEDS OPTOELECTRONICS CO·Filed 2013·Granted Sep 8, 2015·0 cites·15 claims
- 3049USD693779SLED chipCHU CHEN-FU·Filed 2012·Granted Nov 19, 2013·6 cites·1 claims
- 3148US12283791B2Semiconductor laser chip and preparation method thereforYLX INC·Filed 2019·Granted Apr 22, 2025·0 cites·9 claims
- 3248USD690670SLED chipCHU CHEN-FU·Filed 2012·Granted Oct 1, 2013·6 cites·1 claims
- 3346USD685334SLED chipCHU CHEN-FU·Filed 2012·Granted Jul 2, 2013·5 cites·1 claims
- 3445US12107383B2Semiconductor laser and fabrication method thereforSHENZHEN LIGHTING INST·Filed 2019·Granted Oct 1, 2024·0 cites·8 claims
- 3545US2008087875A1Protection for the epitaxial structure of metal devicesFAN FENG-HSU·Filed 2006·Application pending·0 cites
- 3644US12483004B2Laser chip and preparation method thereforSHENZHEN RUBEUST TECH LIMITED·Filed 2021·Granted Nov 25, 2025·0 cites·8 claims
- 3743US9231152B2Light emitting diodeSEMILEDS OPTOELECTRONICS CO·Filed 2013·Granted Jan 5, 2016·0 cites·5 claims
- 3842US9190589B2Light emitting diodeSEMILEDS OPTOELECTRONICS CO·Filed 2013·Granted Nov 17, 2015·0 cites·7 claims
- 3936US2014151630A1Protection for the epitaxial structure of metal devicesFAN FENG-HSU·Filed 2012·Application pending·0 cites
- 4035US2012168714A1Vertical light emitting diode (vled) die and method of fabricationCHU JIUNN-YI·Filed 2011·Application pending·0 cites
- 4131US12406937B2Alignment method for backside photolithography processSHENZHEN RUBEUST TECH LIMITED·Filed 2020·Granted Sep 2, 2025·0 cites·9 claims
- 4229US5981109AUsing (LaNiO3) X (TiO2) 1-X and (LaNiO3) X (Ta2 O5) 1-X oxide absorption composites for attenuating phase shifting blanks and masksTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Nov 9, 1999·0 cites·17 claims
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