Inventor
CHAN CHING-LIN
TW23 patents
⚠️ This page may combine multiple inventors who share the name “CHAN CHING-LIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MACRONIX INT CO LTD
19 patentsUS9190536B1Nov 17, 2015
Junction field effect transistor
MACRONIX INT CO LTD21 citations92
US9520492B2Dec 13, 2016
Semiconductor device having buried layer
MACRONIX INT CO LTD9 citations84
US9520471B1Dec 13, 2016
Semiconductor device having gradient implant region and manufacturing method thereof
MACRONIX INT CO LTD3 citations73
US9305993B2Apr 5, 2016
Method of manufacturing semiconductor structure
MACRONIX INT CO LTD3 citations72
US9035386B2May 19, 2015
Semiconductor structure and method for manufacturing the same
MACRONIX INT CO LTD4 citations72
US9627528B2Apr 18, 2017
Semiconductor device having gate structures and manufacturing method thereof
MACRONIX INT CO LTD3 citations71
US9312380B2Apr 12, 2016
Semiconductor device having deep implantation region and method of fabricating same
MACRONIX INT CO LTD2 citations62
US9070766B1Jun 30, 2015
Semiconductor device and method of forming the same
MACRONIX INT CO LTD1 citations52
US9059283B1Jun 16, 2015
Semiconductor structure
MACRONIX INT CO LTD1 citations52
US9633852B2Apr 25, 2017
Semiconductor structure and method for forming the same
MACRONIX INT CO LTD0 citations51
US9171763B2Oct 27, 2015
Methods of manufacturing a semiconductor device having varying p-top and n-grade regions
MACRONIX INT CO LTD0 citations51
US9000519B2Apr 7, 2015
Semiconductor device having varying p-top and n-grade regions
MACRONIX INT CO LTD0 citations51
US8969870B2Mar 3, 2015
Pattern for ultra-high voltage semiconductor device manufacturing and process monitoring
MACRONIX INT CO LTD0 citations51
US8963277B2Feb 24, 2015
Semiconductor structure and method of manufacturing the same
MACRONIX INT CO LTD0 citations51
US10256307B2Apr 9, 2019
Semiconductor device
MACRONIX INT CO LTD0 citations50
US9443967B1Sep 13, 2016
Semiconductor device having metal layer and method of fabricating same
MACRONIX INT CO LTD1 citations50
US9761656B2Sep 12, 2017
Semiconductor device having buried region and method of fabricating same
MACRONIX INT CO LTD0 citations49
US10121889B2Nov 6, 2018
High voltage semiconductor device
MACRONIX INT CO LTD0 citations41
US9450048B2Sep 20, 2016
Semiconductor device and manufacturing method and operating method for the same
MACRONIX INT CO LTD0 citations41