Semiconductor structure and method of manufacturing the same

Abstract

A semiconductor structure with a high voltage area and a low voltage area includes a substrate of a first conductivity type accommodating the high voltage area and the low voltage area. A resistor is on the substrate, connecting the high voltage area and the low voltage area, and the resistor resides substantially in the high voltage area. The structure further includes a first doped region of the first conductivity type in the substrate between the high voltage area and the low voltage area, and a second doped region of a second conductivity type between the substrate and the first doped region. Moreover, an insulating layer is formed between the resistor and the first doped region.

What is claimed is: 
     
       1. A semiconductor structure with a high voltage area and a low voltage area, the structure comprising:
 a substrate of a first conductivity type accommodating the high voltage area and the low voltage area; 
 a resistor on the substrate, connecting the high voltage area and the low voltage area, wherein the resistor is configured to reduce bias applied to the high voltage area, and the resistor resides substantially in the high voltage area; 
 a first doped region of the first conductivity type in the substrate between the high voltage area and the low voltage area; 
 a second doped region of a second conductivity type between the substrate and the first doped region; 
 an insulating layer between the resistor and the first doped region; and 
 an output contact, electrically connected to the resistor, wherein at least part of the output contact is located in the high voltage area and another part of the output contact is located in the low voltage area. 
 
     
     
       2. The semiconductor structure of  claim 1 , further comprising a third doped region of the second conductivity type between the insulating layer and the first doped region, wherein doping concentration of the third doped region is different from doping concentration of the second doped region. 
     
     
       3. The semiconductor structure of  claim 1 , wherein the insulating layer is between the resistor and the second doped region. 
     
     
       4. The semiconductor structure of  claim 1 , wherein a doping concentration of the first doped region is greater than a doping concentration of the second doped region. 
     
     
       5. The semiconductor structure of  claim 2 , wherein a doping concentration of the third doped region is lower than a doping concentration of the first doped region. 
     
     
       6. The semiconductor structure of  claim 1 , wherein the insulating layer is composed of field oxide or shallow trench isolation. 
     
     
       7. The semiconductor structure of  claim 1 , wherein the resistor is composed of poly-silicon, aluminum, copper, silicon carbide, titanium nitride, or the combination thereof. 
     
     
       8. The semiconductor structure of  claim 2 , further comprising a plurality of the first doped regions and a plurality of the third doped regions. 
     
     
       9. The semiconductor structure of  claim 3 , further comprising a plurality of the first doped regions. 
     
     
       10. The semiconductor structure of  claim 2 , further comprising a fourth doped region of the first conductivity type adjacent to the second doped region. 
     
     
       11. A semiconductor structure with a high voltage area and a low voltage area, the structure comprising:
 a substrate of a first conductivity type; 
 a doped region of a second conductivity type in the substrate; 
 a diode device in the doped region, wherein the diode device comprises a first end of a first conductivity type and a second end of a second conductivity type; 
 an insulating layer on the substrate; 
 a resistor on the insulating layer, electrically connecting a high voltage input of the high voltage area and the low voltage area; 
 an output contact, electrically connected to the resistor, wherein at least part of the output contact is located in the high voltage area and another part of the output contact is located in the low voltage area; and 
 a capacitor comprising a third end connecting to the resistor and a fourth end connecting to the second end of the diode device. 
 
     
     
       12. The semiconductor structure of  claim 11 , wherein the diode device comprises a plurality of diodes connected in series. 
     
     
       13. The semiconductor structure of  claim 11 , wherein the capacitor comprises the insulating layer composed of field oxide or shallow trench isolation. 
     
     
       14. The semiconductor structure of  claim 11 , wherein the resistor is composed of poly-silicon, aluminum, copper, silicon carbide, titanium nitride, or the combination thereof. 
     
     
       15. The semiconductor structure of  claim 11 , wherein the first end of the diode is connected to ground. 
     
     
       16. The semiconductor structure of  claim 15 , wherein a current of the semiconductor structure is allowed to flow sequentially from the high voltage input, the capacitor, the diode device, and finally to the ground, when a voltage applied to the high voltage input is greater than a breakdown voltage of the capacitor and the diode device combined. 
     
     
       17. The semiconductor structure of  claim 15 , wherein a current of the semiconductor device is allowed to flow sequentially from the high voltage input, the resistor, and finally to the low voltage area, when a voltage applied to the high voltage input is lower than a breakdown voltage of the capacitor and the diode device combined.