Inventor
KAO CHING-HUNG
TW89 patents
⚠️ This page may combine multiple inventors who share the name “KAO CHING-HUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
23 patentsUS10566361B2Feb 18, 2020
Wide channel gate structure and method of forming
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10658455B2May 19, 2020
Metal insulator metal capacitor structure having high capacitance
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations81
US11784198B2Oct 10, 2023
Wide channel semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10804211B2Oct 13, 2020
Semiconductor structure and fabricating method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10020265B2Jul 10, 2018
Semiconductor structure and fabricating method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9997628B1Jun 12, 2018
Semiconductor device and method of fabricating thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US10115758B2Oct 30, 2018
Isolation structure for reducing crosstalk between pixels and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11342455B2May 24, 2022
Minimization of silicon germanium facets in planar metal oxide semiconductor structures
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations68
US12362184B2Jul 15, 2025
Semiconductor devices and methods of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12288801B2Apr 29, 2025
Semiconductor structure and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12020940B2Jun 25, 2024
Semiconductor devices and methods of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12464787B2Nov 4, 2025
Circuit structure and method for reducing electronic noises
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12457816B2Oct 28, 2025
Wide channel semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12354959B2Jul 8, 2025
Redistribution layer features
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11901305B2Feb 13, 2024
Method for fabricating semiconductor structure having alignment mark feature
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11682549B2Jun 20, 2023
Semiconductor wafer with modified surface and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11670594B2Jun 6, 2023
Redistribution layer features
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11605709B2Mar 14, 2023
Circuit structure and method for reducing electronic noises
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11488872B2Nov 1, 2022
Method for forming semiconductor device structure with isolation feature
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11380721B2Jul 5, 2022
Wide channel gate structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11362039B2Jun 14, 2022
Semiconductor structure and fabricating method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10916416B2Feb 9, 2021
Semiconductor wafer with modified surface and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10699963B2Jun 30, 2020
Structure and formation method of semiconductor device structure with isolation feature
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
UNITED MICROELECTRONICS CORP
20 patentsUS7517761B2Apr 14, 2009
Method for manufacturing semiconductor device
UNITED MICROELECTRONICS CORP21 citations88
US9537040B2Jan 3, 2017
Complementary metal-oxide-semiconductor image sensor and manufacturing method thereof
UNITED MICROELECTRONICS CORP7 citations84
US8921901B1Dec 30, 2014
Stacked CMOS image sensor and signal processor wafer structure
UNITED MICROELECTRONICS CORP10 citations84
US7868394B2Jan 11, 2011
Metal-oxide-semiconductor transistor and method of manufacturing the same
UNITED MICROELECTRONICS CORP8 citations84
US7741662B2Jun 22, 2010
Ultra high voltage MOS transistor device
UNITED MICROELECTRONICS CORP11 citations84
US7498190B2Mar 3, 2009
Method for fabricating a CMOS image sensor
UNITED MICROELECTRONICS CORP17 citations84
US7408211B2Aug 5, 2008
Transfer transistor of CMOS image sensor
UNITED MICROELECTRONICS CORP16 citations84
US7535063B2May 19, 2009
ESD protection device structure
UNITED MICROELECTRONICS CORP6 citations74
US7531374B2May 12, 2009
CMOS image sensor process and structure
UNITED MICROELECTRONICS CORP7 citations74
US7378327B2May 27, 2008
Method for fabricating a junction varactor with high Q factor
UNITED MICROELECTRONICS CORP7 citations74
US7190014B2Mar 13, 2007
Vertically-stacked plate interdigital capacitor structure
UNITED MICROELECTRONICS CORP8 citations74
US7169680B2Jan 30, 2007
Method for fabricating a metal-insulator-metal capacitor
UNITED MICROELECTRONICS CORP7 citations72
US8383448B2Feb 26, 2013
Method of fabricating metal oxide semiconductor device
UNITED MICROELECTRONICS CORP3 citations63
US7939867B2May 10, 2011
Complementary metal-oxide-semiconductor (CMOS) image sensor and fabricating method thereof
UNITED MICROELECTRONICS CORP2 citations63
US7700440B2Apr 20, 2010
Method of manufacturing a metal-oxide-semiconductor with reduced on-resistance
UNITED MICROELECTRONICS CORP4 citations63
US7531903B2May 12, 2009
Interconnection structure used in a pad region of a semiconductor substrate
UNITED MICROELECTRONICS CORP5 citations63
US7510899B2Mar 31, 2009
Methods for fabricating a CMOS image sensor
UNITED MICROELECTRONICS CORP2 citations63
US7456451B2Nov 25, 2008
Ultra high voltage MOS transistor device
UNITED MICROELECTRONICS CORP2 citations63
US7361955B2Apr 22, 2008
High-voltage MOS device with dummy diffusion region
UNITED MICROELECTRONICS CORP6 citations63
US7924504B2Apr 12, 2011
Color filter structure having inorganic layers
UNITED MICROELECTRONICS CORP6 citations62
KAO CHING-HUNG
6 patentsUS8334189B2Dec 18, 2012
Method for forming trenches and trench isolation on a substrate
KAO CHING-HUNG9 citations84
US8779539B2Jul 15, 2014
Image sensor and method for fabricating the same
KAO CHING-HUNG8 citations83
US8643101B2Feb 4, 2014
High voltage metal oxide semiconductor device having a multi-segment isolation structure
KAO CHING-HUNG11 citations81
US8779344B2Jul 15, 2014
Image sensor including a deep trench isolation (DTI)that does not contact a connecting element physically
KAO CHING-HUNG5 citations73
US9093296B2Jul 28, 2015
LDMOS transistor having trench structures extending to a buried layer
KAO CHING-HUNG3 citations63
US8722509B2May 13, 2014
Method of forming trench isolation
KAO CHING-HUNG2 citations63
UNITED MICROELETRONICS CORP
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