Inventor
LIN KU-FENG
TW67 patents
⚠️ This page may combine multiple inventors who share the name “LIN KU-FENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
45 patentsUS11688436B2Jun 27, 2023
Sense amplifier and operating method for non-volatile memory with reduced need on adjusting offset to compensate the mismatch
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11574657B2Feb 7, 2023
Memory device, sense amplifier and method for mismatch compensation
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations86
US10957366B2Mar 23, 2021
Circuits and methods for compensating a mismatch in a sense amplifier
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US12277990B2Apr 15, 2025
Memory device and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations75
US11950432B2Apr 2, 2024
Semiconductor packages and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations74
US11961546B2Apr 16, 2024
MRAM reference current
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11854650B2Dec 26, 2023
Memory device, sense amplifier and method for mismatch compensation
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11810635B2Nov 7, 2023
Sense amplifier for coupling effect reduction
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11783873B2Oct 10, 2023
Circuits and methods for compensating a mismatch in a sense amplifier
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11601117B1Mar 7, 2023
Sense amplifier for coupling effect reduction
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11380371B2Jul 5, 2022
Sense amplifier and operating method for non-volatile memory with reduced need on adjusting offset to compensate the mismatch
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11380415B2Jul 5, 2022
Dynamic error monitor and repair
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11373690B2Jun 28, 2022
Circuits and methods for compensating a mismatch in a sense amplifier
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11081155B2Aug 3, 2021
MRAM reference current
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10372948B2Aug 6, 2019
Scrambling apparatus and method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10366765B2Jul 30, 2019
Adjustment circuit for partitioned memory block
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10163980B2Dec 25, 2018
Resistive memory array and fabricating method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11903188B2Feb 13, 2024
Memory devices, semiconductor devices, and methods of operating a memory device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12288577B2Apr 29, 2025
Sensing amplifier, method and controller for sensing memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64
US12482531B2Nov 25, 2025
Dynamic error monitor and repair
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12080375B2Sep 3, 2024
Circuits and methods for compensating a mismatch in a sense amplifier
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12014796B2Jun 18, 2024
Memory device and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11935610B2Mar 19, 2024
Dynamic error monitor and repair
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11854617B2Dec 26, 2023
Structure for multiple sense amplifiers of memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11631440B2Apr 18, 2023
Sensing amplifier, method and controller for sensing memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11574676B2Feb 7, 2023
Structure for multiple sense amplifiers of memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11386936B2Jul 12, 2022
Memory device, sensing amplifier, and method for sensing memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9368552B2Jun 14, 2016
Resistive memory array and fabricating method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US12514132B2Dec 30, 2025
Memory device with source lines in parallel
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12432933B2Sep 30, 2025
Semiconductor packages
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12380950B2Aug 5, 2025
Non-volatile static random access memory (NVSRAM) with multiple magnetic tunnel junction cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12354635B2Jul 8, 2025
MRAM reference current
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12284804B2Apr 22, 2025
Memory devices, semiconductor devices, and methods of operations a memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12230352B2Feb 18, 2025
Memory device, memory cell read circuit, and control method for mismatch compensation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12190986B2Jan 7, 2025
Sense amplifier for coupling effect reduction
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12148487B2Nov 19, 2024
High-density and high-voltage-tolerable pure core memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11984164B2May 14, 2024
Non-volatile static random access memory (nvSRAM) with multiple magnetic tunnel junction cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11962332B2Apr 16, 2024
Encoder
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11910723B2Feb 20, 2024
Memory device with electrically parallel source lines
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11657873B2May 23, 2023
Non-volatile static random access memory (nvSRAM) with multiple magnetic tunnel junction cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11575387B2Feb 7, 2023
Symmetry unary code encoder
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11189336B2Nov 30, 2021
Word line driving device for minimizing RC delay
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11107530B2Aug 31, 2021
Non-volatile static random access memory (nvSRAM) with multiple magnetic tunnel junction cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11024395B2Jun 1, 2021
Adjustment circuit for partitioned memory block
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10998058B2May 4, 2021
Adjustment circuit for partitioned memory block
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
TAIWAN SEMICONDUCTOR MFG
2 patentsYU HUNG-CHANG
2 patentsCHIU PI-FENG
1 patentShowing the top 50 of 67 patents by PatentIndex Score.