Inventor
PARK JOODONG
US42 patents
⚠️ This page may combine multiple inventors who share the name “PARK JOODONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
34 patentsUS10096599B2Oct 9, 2018
Methods of integrating multiple gate dielectric transistors on a tri-gate (finFET) process
INTEL CORP7 citations84
US9972642B2May 15, 2018
High voltage three-dimensional devices having dielectric liners
INTEL CORP5 citations84
US9786783B2Oct 10, 2017
Transistor architecture having extended recessed spacer and source/drain regions and method of making same
INTEL CORP16 citations84
US10204999B2Feb 12, 2019
Transistor with airgap spacer
INTEL CORP8 citations82
US10304681B2May 28, 2019
Dual height glass for finFET doping
INTEL CORP3 citations73
US9881927B2Jan 30, 2018
CMOS-compatible polycide fuse structure and method of fabricating same
INTEL CORP3 citations73
US9780217B2Oct 3, 2017
Non-planar semiconductor device having self-aligned fin with top blocking layer
INTEL CORP3 citations73
US9748252B2Aug 29, 2017
Antifuse element utilizing non-planar topology
INTEL CORP3 citations73
US11276760B2Mar 15, 2022
Non-planar semiconductor device having omega-fin with doped sub-fin region and method to fabricate same
INTEL CORP2 citations72
US10535747B2Jan 14, 2020
Transistor with dual-gate spacer
INTEL CORP5 citations72
US10431661B2Oct 1, 2019
Transistor with inner-gate spacer
INTEL CORP5 citations71
US9520494B2Dec 13, 2016
Vertical non-planar semiconductor device for system-on-chip (SoC) applications
INTEL CORP2 citations63
US12520578B2Jan 6, 2026
Methods of integrating multiple gate dielectric transistors on a tri-gate (finfet) process
INTEL CORP0 citations62
US12136628B2Nov 5, 2024
High voltage three-dimensional devices having dielectric liners
INTEL CORP0 citations62
US11881486B2Jan 23, 2024
High voltage three-dimensional devices having dielectric liners
INTEL CORP0 citations62
US11824002B2Nov 21, 2023
Variable pitch and stack height for high performance interconnects
INTEL CORP0 citations62
US11695008B2Jul 4, 2023
Methods of integrating multiple gate dielectric transistors on a tri-gate (FINFET) process
INTEL CORP0 citations62
US11610917B2Mar 21, 2023
High voltage three-dimensional devices having dielectric liners
INTEL CORP0 citations62
US11251201B2Feb 15, 2022
High voltage three-dimensional devices having dielectric liners
INTEL CORP0 citations62
US10892261B2Jan 12, 2021
Metal resistor and self-aligned gate edge (SAGE) architecture having a metal resistor
INTEL CORP1 citations62
US10559688B2Feb 11, 2020
Transistor with thermal performance boost
INTEL CORP1 citations62
US11063137B2Jul 13, 2021
Asymmetric spacer for low capacitance applications
INTEL CORP0 citations61
US10923574B2Feb 16, 2021
Transistor with inner-gate spacer
INTEL CORP1 citations61
US11114538B2Sep 7, 2021
Transistor with an airgap spacer adjacent to a transistor gate
INTEL CORP0 citations60
US10340220B2Jul 2, 2019
Compound lateral resistor structures for integrated circuitry
INTEL CORP1 citations59
US10847544B2Nov 24, 2020
High voltage three-dimensional devices having dielectric liners
INTEL CORP0 citations52
US10692888B2Jun 23, 2020
High voltage three-dimensional devices having dielectric liners
INTEL CORP0 citations52
US10263112B2Apr 16, 2019
Vertical non-planar semiconductor device for system-on-chip (SoC) applications
INTEL CORP0 citations52
US9806095B2Oct 31, 2017
High voltage three-dimensional devices having dielectric liners
INTEL CORP0 citations52
US9741721B2Aug 22, 2017
Low leakage non-planar access transistor for embedded dynamic random access memory (eDRAM)
INTEL CORP1 citations52
US10355093B2Jul 16, 2019
Non-planar semiconductor device having omega-fin with doped sub-fin region and method to fabricate same
INTEL CORP0 citations51
US11121040B2Sep 14, 2021
Multi voltage threshold transistors through process and design-induced multiple work functions
INTEL CORP0 citations50
US7691718B2Apr 6, 2010
Dual layer hard mask for block salicide poly resistor (BSR) patterning
INTEL CORP1 citations46
US10784378B2Sep 22, 2020
Ultra-scaled fin pitch having dual gate dielectrics
INTEL CORP0 citations40
HAFEZ WALID M
3 patentsUS9159734B2Oct 13, 2015
Antifuse element utilizing non-planar topology
HAFEZ WALID M21 citations92
US8981481B2Mar 17, 2015
High voltage three-dimensional devices having dielectric liners
HAFEZ WALID M12 citations92
US9570467B2Feb 14, 2017
High voltage three-dimensional devices having dielectric liners
HAFEZ WALID M3 citations83