P

Inventor

PARK JOODONG

US42 patents
⚠️ This page may combine multiple inventors who share the name “PARK JOODONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INTEL CORP

34 patents
US10096599B2Oct 9, 2018

Methods of integrating multiple gate dielectric transistors on a tri-gate (finFET) process

INTEL CORP7 citations84
US9972642B2May 15, 2018

High voltage three-dimensional devices having dielectric liners

INTEL CORP5 citations84
US9786783B2Oct 10, 2017

Transistor architecture having extended recessed spacer and source/drain regions and method of making same

INTEL CORP16 citations84
US10204999B2Feb 12, 2019

Transistor with airgap spacer

INTEL CORP8 citations82
US10304681B2May 28, 2019

Dual height glass for finFET doping

INTEL CORP3 citations73
US9881927B2Jan 30, 2018

CMOS-compatible polycide fuse structure and method of fabricating same

INTEL CORP3 citations73
US9780217B2Oct 3, 2017

Non-planar semiconductor device having self-aligned fin with top blocking layer

INTEL CORP3 citations73
US9748252B2Aug 29, 2017

Antifuse element utilizing non-planar topology

INTEL CORP3 citations73
US11276760B2Mar 15, 2022

Non-planar semiconductor device having omega-fin with doped sub-fin region and method to fabricate same

INTEL CORP2 citations72
US10535747B2Jan 14, 2020

Transistor with dual-gate spacer

INTEL CORP5 citations72
US10431661B2Oct 1, 2019

Transistor with inner-gate spacer

INTEL CORP5 citations71
US9520494B2Dec 13, 2016

Vertical non-planar semiconductor device for system-on-chip (SoC) applications

INTEL CORP2 citations63
US12520578B2Jan 6, 2026

Methods of integrating multiple gate dielectric transistors on a tri-gate (finfet) process

INTEL CORP0 citations62
US12136628B2Nov 5, 2024

High voltage three-dimensional devices having dielectric liners

INTEL CORP0 citations62
US11881486B2Jan 23, 2024

High voltage three-dimensional devices having dielectric liners

INTEL CORP0 citations62
US11824002B2Nov 21, 2023

Variable pitch and stack height for high performance interconnects

INTEL CORP0 citations62
US11695008B2Jul 4, 2023

Methods of integrating multiple gate dielectric transistors on a tri-gate (FINFET) process

INTEL CORP0 citations62
US11610917B2Mar 21, 2023

High voltage three-dimensional devices having dielectric liners

INTEL CORP0 citations62
US11251201B2Feb 15, 2022

High voltage three-dimensional devices having dielectric liners

INTEL CORP0 citations62
US10892261B2Jan 12, 2021

Metal resistor and self-aligned gate edge (SAGE) architecture having a metal resistor

INTEL CORP1 citations62
US10559688B2Feb 11, 2020

Transistor with thermal performance boost

INTEL CORP1 citations62
US11063137B2Jul 13, 2021

Asymmetric spacer for low capacitance applications

INTEL CORP0 citations61
US10923574B2Feb 16, 2021

Transistor with inner-gate spacer

INTEL CORP1 citations61
US11114538B2Sep 7, 2021

Transistor with an airgap spacer adjacent to a transistor gate

INTEL CORP0 citations60
US10340220B2Jul 2, 2019

Compound lateral resistor structures for integrated circuitry

INTEL CORP1 citations59
US10847544B2Nov 24, 2020

High voltage three-dimensional devices having dielectric liners

INTEL CORP0 citations52
US10692888B2Jun 23, 2020

High voltage three-dimensional devices having dielectric liners

INTEL CORP0 citations52
US10263112B2Apr 16, 2019

Vertical non-planar semiconductor device for system-on-chip (SoC) applications

INTEL CORP0 citations52
US9806095B2Oct 31, 2017

High voltage three-dimensional devices having dielectric liners

INTEL CORP0 citations52
US9741721B2Aug 22, 2017

Low leakage non-planar access transistor for embedded dynamic random access memory (eDRAM)

INTEL CORP1 citations52
US10355093B2Jul 16, 2019

Non-planar semiconductor device having omega-fin with doped sub-fin region and method to fabricate same

INTEL CORP0 citations51
US11121040B2Sep 14, 2021

Multi voltage threshold transistors through process and design-induced multiple work functions

INTEL CORP0 citations50
US7691718B2Apr 6, 2010

Dual layer hard mask for block salicide poly resistor (BSR) patterning

INTEL CORP1 citations46
US10784378B2Sep 22, 2020

Ultra-scaled fin pitch having dual gate dielectrics

INTEL CORP0 citations40

HAFEZ WALID M

3 patents

YEH JENG-YA D

2 patents

TSAI CURTIS

1 patent

CJ CHEILJEDANG CORP

1 patent

JAN CHIA-HONG

1 patent