Inventor
BRENNAN WILLIAM S
US55 patents
⚠️ This page may combine multiple inventors who share the name “BRENNAN WILLIAM S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
48 patentsUS6955928B1Oct 18, 2005
Closed loop residual gas analyzer process control technique
ADVANCED MICRO DEVICES INC405 citations99
US5953626ASep 14, 1999
Dissolvable dielectric method
ADVANCED MICRO DEVICES INC160 citations99
US5850105ADec 15, 1998
Substantially planar semiconductor topography using dielectrics and chemical mechanical polish
ADVANCED MICRO DEVICES INC278 citations99
US5759913AJun 2, 1998
Method of formation of an air gap within a semiconductor dielectric by solvent desorption
ADVANCED MICRO DEVICES INC148 citations99
US5827776AOct 27, 1998
Method of making an integrated circuit which uses an etch stop for producing staggered interconnect lines
ADVANCED MICRO DEVICES INC139 citations98
US5792706AAug 11, 1998
Interlevel dielectric with air gaps to reduce permitivity
ADVANCED MICRO DEVICES INC96 citations98
US6208015B1Mar 27, 2001
Interlevel dielectric with air gaps to lessen capacitive coupling
ADVANCED MICRO DEVICES INC51 citations96
US5926713AJul 20, 1999
Method for achieving global planarization by forming minimum mesas in large field areas
ADVANCED MICRO DEVICES INC69 citations96
US5899727AMay 4, 1999
Method of making a semiconductor isolation region bounded by a trench and covered with an oxide to improve planarization
ADVANCED MICRO DEVICES INC56 citations96
US5814555ASep 29, 1998
Interlevel dielectric with air gaps to lessen capacitive coupling
ADVANCED MICRO DEVICES INC63 citations96
US5783864AJul 21, 1998
Multilevel interconnect structure of an integrated circuit having air gaps and pillars separating levels of interconnect
ADVANCED MICRO DEVICES INC78 citations96
US6614064B1Sep 2, 2003
Transistor having a gate stick comprised of a metal, and a method of making same
ADVANCED MICRO DEVICES INC19 citations93
US6376330B1Apr 23, 2002
Dielectric having an air gap formed between closely spaced interconnect lines
ADVANCED MICRO DEVICES INC48 citations93
US6091149AJul 18, 2000
Dissolvable dielectric method and structure
ADVANCED MICRO DEVICES INC37 citations93
US5968843AOct 19, 1999
Method of planarizing a semiconductor topography using multiple polish pads
ADVANCED MICRO DEVICES INC21 citations93
US5926717AJul 20, 1999
Method of making an integrated circuit with oxidizable trench liner
ADVANCED MICRO DEVICES INC41 citations93
US5924008AJul 13, 1999
Integrated circuit having local interconnect for reducing signal cross coupled noise
ADVANCED MICRO DEVICES INC17 citations93
US5846876ADec 8, 1998
Integrated circuit which uses a damascene process for producing staggered interconnect lines
ADVANCED MICRO DEVICES INC35 citations93
US5783481AJul 21, 1998
Semiconductor interlevel dielectric having a polymide for producing air gaps
ADVANCED MICRO DEVICES INC29 citations93
US5767012AJun 16, 1998
Method of forming a recessed interconnect structure
ADVANCED MICRO DEVICES INC22 citations93
US5717242AFeb 10, 1998
Integrated circuit having local interconnect for reduing signal cross coupled noise
ADVANCED MICRO DEVICES INC22 citations93
US6555479B1Apr 29, 2003
Method for forming openings for conductive interconnects
ADVANCED MICRO DEVICES INC31 citations92
US6489240B1Dec 3, 2002
Method for forming copper interconnects
ADVANCED MICRO DEVICES INC23 citations92
US6067855AMay 30, 2000
Apparatus and method for measuring liquid level in a sealed container
ADVANCED MICRO DEVICES INC21 citations92
US6800494B1Oct 5, 2004
Method and apparatus for controlling copper barrier/seed deposition processes
ADVANCED MICRO DEVICES INC21 citations86
US6809032B1Oct 26, 2004
Method and apparatus for detecting the endpoint of a chemical-mechanical polishing operation using optical techniques
ADVANCED MICRO DEVICES INC18 citations84
US6413846B1Jul 2, 2002
Contact each methodology and integration scheme
ADVANCED MICRO DEVICES INC15 citations84
US6211072B1Apr 3, 2001
CVD Tin Barrier process with improved contact resistance
ADVANCED MICRO DEVICES INC15 citations84
US6060389AMay 9, 2000
Semiconductor fabrication employing a conformal layer of CVD deposited TiN at the periphery of an interconnect
ADVANCED MICRO DEVICES INC17 citations84
US6153833ANov 28, 2000
Integrated circuit having interconnect lines separated by a dielectric having a capping layer
ADVANCED MICRO DEVICES INC10 citations74
US6150721ANov 21, 2000
Integrated circuit which uses a damascene process for producing staggered interconnect lines
ADVANCED MICRO DEVICES INC15 citations74
US6127264AOct 3, 2000
Integrated circuit having conductors of enhanced cross-sectional area
ADVANCED MICRO DEVICES INC10 citations74
US6090703AJul 18, 2000
Method of forming an integrated circuit having conductors of enhanced cross-sectional area with etch stop barrier layer
ADVANCED MICRO DEVICES INC10 citations74
US6031289AFeb 29, 2000
Integrated circuit which uses a recessed local conductor for producing staggered interconnect lines
ADVANCED MICRO DEVICES INC11 citations74
US5894168AApr 13, 1999
Mask generation technique for producing an integrated circuit with optimal polysilicon interconnect layout for achieving global planarization
ADVANCED MICRO DEVICES INC5 citations74
US5854515ADec 29, 1998
Integrated circuit having conductors of enhanced cross-sectional area
ADVANCED MICRO DEVICES INC6 citations74
US5854131ADec 29, 1998
Integrated circuit having horizontally and vertically offset interconnect lines
ADVANCED MICRO DEVICES INC14 citations74
US5851913ADec 22, 1998
Method for forming a multilevel interconnect structure of an integrated circuit by a single via etch and single fill process
ADVANCED MICRO DEVICES INC13 citations74
US5847462ADec 8, 1998
Integrated circuit having conductors of enhanced cross-sectional area with etch stop barrier layer
ADVANCED MICRO DEVICES INC8 citations74
US5830773ANov 3, 1998
Method for forming semiconductor field region dielectrics having globally planarized upper surfaces
ADVANCED MICRO DEVICES INC13 citations74
US5767000AJun 16, 1998
Method of manufacturing subfield conductive layer
ADVANCED MICRO DEVICES INC5 citations74
US5766803AJun 16, 1998
Mask generation technique for producing an integrated circuit with optimal metal interconnect layout for achieving global planarization
ADVANCED MICRO DEVICES INC9 citations74
US5733798AMar 31, 1998
Mask generation technique for producing an integrated circuit with optimal polysilicon interconnect layout for achieving global planarization
ADVANCED MICRO DEVICES INC13 citations74
US6514858B1Feb 4, 2003
Test structure for providing depth of polish feedback
ADVANCED MICRO DEVICES INC8 citations73
US6191032B1Feb 20, 2001
Thin titanium film as self-regulating filter for silicon migration into aluminum metal lines
ADVANCED MICRO DEVICES INC12 citations70
US6395100B1May 28, 2002
Method of improving vacuum quality in semiconductor processing chambers
ADVANCED MICRO DEVICES INC8 citations66
US6353253B2Mar 5, 2002
Semiconductor isolation region bounded by a trench and covered with an oxide to improve planarization
ADVANCED MICRO DEVICES INC3 citations63
US6326298B1Dec 4, 2001
Substantially planar semiconductor topography using dielectrics and chemical mechanical polish
ADVANCED MICRO DEVICES INC2 citations63
ADVANCED MICRO DEVCIES INC
1 patentADVANCED MICRO SERVICES
1 patentShowing the top 50 of 55 patents by PatentIndex Score.