Inventor
RAMKUMAR KRISHNASWAMY
US174 patents
⚠️ This page may combine multiple inventors who share the name “RAMKUMAR KRISHNASWAMY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CYPRESS SEMICONDUCTOR CORP
29 patentsUS10079243B2Sep 18, 2018
Method of integrating a charge-trapping gate stack into a CMOS flow
CYPRESS SEMICONDUCTOR CORP56 citations98
US8883624B1Nov 11, 2014
Integration of a memory transistor into high-K, metal gate CMOS process flow
CYPRESS SEMICONDUCTOR CORP45 citations98
US6677213B1Jan 13, 2004
SONOS structure including a deuterated oxide-silicon interface and method for making the same
CYPRESS SEMICONDUCTOR CORP85 citations97
US9093318B2Jul 28, 2015
Memory transistor with multiple charge storing layers and a high work function gate electrode
CYPRESS SEMICONDUCTOR CORP22 citations96
US7390750B1Jun 24, 2008
Method of patterning elements within a semiconductor topography
CYPRESS SEMICONDUCTOR CORP59 citations96
US6818558B1Nov 16, 2004
Method of manufacturing a dielectric layer for a silicon-oxide-nitride-oxide-silicon (SONOS) type devices
CYPRESS SEMICONDUCTOR CORP190 citations96
US8993457B1Mar 31, 2015
Method of fabricating a charge-trapping gate stack using a CMOS process flow
CYPRESS SEMICONDUCTOR CORP480 citations95
US7042054B1May 9, 2006
SONOS structure including a deuterated oxide-silicon interface and method for making the same
CYPRESS SEMICONDUCTOR CORP45 citations95
US9406574B1Aug 2, 2016
Oxide formation in a plasma process
CYPRESS SEMICONDUCTOR CORP12 citations93
US9218978B1Dec 22, 2015
Method of ONO stack formation
CYPRESS SEMICONDUCTOR CORP24 citations93
US8916432B1Dec 23, 2014
Methods to integrate SONOS into CMOS flow
CYPRESS SEMICONDUCTOR CORP30 citations93
US6436848B1Aug 20, 2002
Method for forming nitrogen-rich silicon oxide-based dielectric materials
CYPRESS SEMICONDUCTOR CORP40 citations93
US5830804ANov 3, 1998
Encapsulated dielectric and method of fabrication
CYPRESS SEMICONDUCTOR CORP21 citations93
US9929240B2Mar 27, 2018
Memory transistor with multiple charge storing layers and a high work function gate electrode
CYPRESS SEMICONDUCTOR CORP11 citations92
US9502543B1Nov 22, 2016
Method of manufacturing for memory transistor with multiple charge storing layers and a high work function gate electrode
CYPRESS SEMICONDUCTOR CORP15 citations92
US9355849B1May 31, 2016
Oxide-nitride-oxide stack having multiple oxynitride layers
CYPRESS SEMICONDUCTOR CORP19 citations92
US9349824B2May 24, 2016
Oxide-nitride-oxide stack having multiple oxynitride layers
CYPRESS SEMICONDUCTOR CORP18 citations92
US9306025B2Apr 5, 2016
Memory transistor with multiple charge storing layers and a high work function gate electrode
CYPRESS SEMICONDUCTOR CORP17 citations92
US8796098B1Aug 5, 2014
Embedded SONOS based memory cells
CYPRESS SEMICONDUCTOR CORP19 citations92
US7799670B2Sep 21, 2010
Plasma oxidation of a memory layer to form a blocking layer in non-volatile charge trap memory devices
CYPRESS SEMICONDUCTOR CORP24 citations92
US7189652B1Mar 13, 2007
Selective oxidation of gate stack
CYPRESS SEMICONDUCTOR CORP21 citations92
US7026235B1Apr 11, 2006
Dual-damascene process and associated floating metal structures
CYPRESS SEMICONDUCTOR CORP23 citations92
US6943126B1Sep 13, 2005
Deuterium incorporated nitride
CYPRESS SEMICONDUCTOR CORP33 citations92
US6774452B1Aug 10, 2004
Semiconductor structure having alignment marks with shallow trench isolation
CYPRESS SEMICONDUCTOR CORP42 citations92
US6436799B1Aug 20, 2002
Process for annealing semiconductors and/or integrated circuits
CYPRESS SEMICONDUCTOR CORP27 citations92
US6004399ADec 21, 1999
Ultra-low particle semiconductor cleaner for removal of particle contamination and residues from surface oxide formation on semiconductor wafers
CYPRESS SEMICONDUCTOR CORP46 citations92
US6534378B1Mar 18, 2003
Method for forming an integrated circuit device
CYPRESS SEMICONDUCTOR CORP31 citations90
US6890859B1May 10, 2005
Methods of forming semiconductor structures having reduced defects, and articles and devices formed thereby
CYPRESS SEMICONDUCTOR CORP38 citations89
US6033991AMar 7, 2000
Isolation scheme based on recessed locos using a sloped Si etch and dry field oxidation
CYPRESS SEMICONDUCTOR CORP21 citations89
RAMKUMAR KRISHNASWAMY
7 patentsUS8283261B2Oct 9, 2012
Radical oxidation process for fabricating a nonvolatile charge trap memory device
RAMKUMAR KRISHNASWAMY46 citations98
US8071453B1Dec 6, 2011
Method of ONO integration into MOS flow
RAMKUMAR KRISHNASWAMY74 citations98
US8318608B2Nov 27, 2012
Method of fabricating a nonvolatile charge trap memory device
RAMKUMAR KRISHNASWAMY46 citations97
US8143129B2Mar 27, 2012
Integration of non-volatile charge trap memory devices and logic CMOS devices
RAMKUMAR KRISHNASWAMY50 citations95
US8940645B2Jan 27, 2015
Radical oxidation process for fabricating a nonvolatile charge trap memory device
RAMKUMAR KRISHNASWAMY33 citations93
US8993453B1Mar 31, 2015
Method of fabricating a nonvolatile charge trap memory device
RAMKUMAR KRISHNASWAMY17 citations92
US8679927B2Mar 25, 2014
Integration of non-volatile charge trap memory devices and logic CMOS devices
RAMKUMAR KRISHNASWAMY31 citations92
POLISHCHUK IGOR
4 patentsUS8063434B1Nov 22, 2011
Memory transistor with multiple charge storing layers and a high work function gate electrode
POLISHCHUK IGOR93 citations98
US8633537B2Jan 21, 2014
Memory transistor with multiple charge storing layers and a high work function gate electrode
POLISHCHUK IGOR23 citations96
US8859374B1Oct 14, 2014
Memory transistor with multiple charge storing layers and a high work function gate electrode
POLISHCHUK IGOR19 citations92
US8592891B1Nov 26, 2013
Methods for fabricating semiconductor memory with process induced strain
POLISHCHUK IGOR19 citations92
Longitude Flash Memory Solutions Ltd
3 patentsUS10700083B1Jun 30, 2020
Method of ONO integration into logic CMOS flow
Longitude Flash Memory Solutions Ltd6 citations84
US10593812B2Mar 17, 2020
Radical oxidation process for fabricating a nonvolatile charge trap memory device
Longitude Flash Memory Solutions Ltd7 citations84
US10374067B2Aug 6, 2019
Oxide-nitride-oxide stack having multiple oxynitride layers
Longitude Flash Memory Solutions Ltd3 citations84
JENNE FREDRICK
2 patentsLEVY SAGY
2 patentsCYPRESS SEMICONDUCTOR COMPANY
1 patentKOUTNY JR WILLIAM W C
1 patentCYPRESS SEMICONDUCTOR CORPORTI
1 patentShowing the top 50 of 174 patents by PatentIndex Score.