Inventor · disambiguated record
Naotsugu Yoshihiro
Also filed as: YOSHIHIRO NAOTSUGU
3 granted patents·294 citations·filing 1980–1983
78Inventor score
Technology areasH10P
Top patents by PatentIndex Score
3 records- 0194US4314595AMethod of forming nondefective zone in silicon single crystal wafer by two stage-heat treatmentVLSI TECHNOLOGY RES ASS·Filed 1980·Granted Feb 9, 1982·179 cites·13 claims
- 0289US4565584AMethod of producing single crystal film utilizing a two-step heat treatmentHITACHI LTD·Filed 1983·Granted Jan 21, 1986·76 cites·8 claims
- 0374US4498951AMethod of manufacturing single-crystal filmHITACHI LTD·Filed 1982·Granted Feb 12, 1985·39 cites·18 claims
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