Inventor
CHENG ANHAO
TW18 patents
Patents
18 patentsUS10541218B2Jan 21, 2020
Redistribution layer structure and fabrication method therefor
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations82
US11373970B2Jun 28, 2022
Semiconductor device having a redistribution line
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11227935B2Jan 18, 2022
Gate structure and methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US10811314B2Oct 20, 2020
Method of forming semiconductor device having a dual material redistribution line
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10431664B2Oct 1, 2019
Gate structure and methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations71
US9991189B2Jun 5, 2018
Semiconductor device having a dual material redistribution line
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12363987B2Jul 15, 2025
Partial metal grain size control to improve CMP loading effect
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12218181B2Feb 4, 2025
Barrier layer for metal insulator metal capacitors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12211890B2Jan 28, 2025
Barrier layer for metal insulator metal capacitors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11978781B2May 7, 2024
Partial metal grain size control to improve CMP loading effect
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12400948B2Aug 26, 2025
Structure and method for interlevel dielectric layer with regions of differing dielectric constant
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12166104B2Dec 10, 2024
Gate structure and methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12027447B2Jul 2, 2024
Semiconductor device having a dual material redistribution line
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11955421B2Apr 9, 2024
Structure and method for interlevel dielectric layer with regions of differing dielectric constant
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11799014B2Oct 24, 2023
Gate structure and methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11410882B2Aug 9, 2022
Method of forming semiconductor device having a dual material redistribution line and semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12074024B2Aug 27, 2024
Semiconductor devices and methods of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations56
US12581711B2Mar 17, 2026
Semiconductor structure and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51