Inventor

SRIRAM SAPTHARISHI

US54 patents

⚠️ This page may combine multiple inventors who share the name “SRIRAM SAPTHARISHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SRIRAM SAPTHARISHI

CREE INC

Asymetric layout structures for transistors and methods of fabricating the same

Transistors having buried p-type layers beneath the source region

Recessed field plate transistor structures

Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same

Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides

Delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure

Methods of fabricating delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure

Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same

Cascode structures with GaN cap layers

Cascode structures for GaN HEMTs

Mix doping of a semi-insulating Group III nitride

Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides

Monolithic microwave integrated circuits having both enhancement-mode and depletion mode transistors

Transistors having buried p-type layers coupled to the gate

Metal semiconductor field effect transistors (MESFETS) having channels of varying thicknesses and related methods

Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same

Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity

Circuits and group III-nitride high-electron mobility transistors with buried p-type layers improving overload recovery and process for implementing the same

Monolithic microwave integrated circuits having both enhancement-mode and depletion mode transistors

Semiconductor device with improved field plate

Circuits and group III-nitride transistors with buried p-layers and controlled gate voltages and methods thereof

Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same

Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same

Monolithic microwave integrated circuits having both enhancement-mode and depletion mode transistors

Depletion mode semiconductor devices including current dependent resistance

Semiconductor devices having a plurality of unit cell transistors that have smoothed turn-on behavior and improved linearity

Group III-nitride transistors with back barrier structures and buried p-type layers and methods thereof

Tunnel junction field effect transistors having self-aligned source and gate electrodes and methods of forming the same

Tunnel junction field effect transistors having self-aligned source and gate electrodes and methods of forming the same

Transistors having buried N-type and P-type regions beneath the source region and methods of fabricating the same

Methods of fabricating transistors having buried p-type layers beneath the source region

WOLFSPEED INC

Structures for reducing electron concentration and process for reducing electron concentration

Field effect transistor with enhanced reliability

Group III-nitride high-electron mobility transistors with a buried metallic conductive material layer and process for making the same

Group III-nitride high-electron mobility transistors with gate connected buried p-type layers and process for making the same

Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same

Gallium Nitride high-electron mobility transistors with p-type layers and process for making the same

Depletion mode semiconductor devices including current dependent resistance

Field effect transistor with selective channel layer doping

NORTHROP GRUMMAN CORP

Silicon carbide power MESFET with surface effect supressive layer

Integrated circuit non-etch technique for forming vias in a semiconductor wafer and a semiconductor wafer having vias formed therein using non-etch technique

Silicon carbide static induction transistor

Silicon carbide power field effect transistor

WESTINGHOUSE ELECTRIC CORP

Solid state micro-machined mass spectrograph universal gas detection sensor

Power FETS with improved high voltage performance

SMITH JR THOMAS J

High power gallium nitride field effect transistor switches

CREE FAYETTEVILLE INC

Gallium nitride high-electron mobility transistors with p-type layers and process for making the same

MACOM TECH SOLUTIONS HOLDINGS INC

Semiconductor devices having unit cell transistors with smoothed turn-on behavior and improved linearity

SRIRAM SAPTHARISHI

Semiconductor devices having varying electrode widths to provide non-uniform gate pitches and related methods

HAGLEITNER HELMUT

Schottky contact