Inventor · disambiguated record
Yukinobu Murao
Also filed as: MURAO YUKINOBU
5 granted patents·2 pending applications·250 citations·filing 1993–2008
81Inventor score
Top patents by PatentIndex Score
7 records- 0192US5518962APlanarized interlayer insulating film formed of stacked BPSG film and ozone-teos NSG film in semiconductor device and method for forming the sameNEC CORP·Filed 1995·Granted May 21, 1996·219 cites·7 claims
- 0277US7589002B2Method of forming an oxygen- or nitrogen-terminated silicon nanocrystalline structure and an oxygen- or nitrogen-terminated silicon nanocrystalline structure formed by the methodANELVA CORP·Filed 2008·Granted Sep 15, 2009·2 cites·7 claims
- 0373US7666763B2Nanosilicon semiconductor substrate manufacturing method and semiconductor circuit device using nanosilicon semiconductor substrate manufactured by the methodCANON ANELVA CORP·Filed 2008·Granted Feb 23, 2010·4 cites·8 claims
- 0454US2007262307A1Method of forming an oxygen- or nitrogen-terminated silicon nanocrystalline structure and an oxygen- or nitrogen-terminated silicon nanocrystalline structure formed by the methodNUMASAWA YOICHIRO·Filed 2007·Application pending·0 cites
- 0551US5491108AMethod of producing semiconductor integrated circuit device having interplayer insulating film covering substrateNEC CORP·Filed 1993·Granted Feb 13, 1996·20 cites·6 claims
- 0635US6281536B1Ferroelectric memory device with improved ferroelectric capacity characteristicNEC CORP·Filed 1999·Granted Aug 28, 2001·5 cites·18 claims
- 0723US2006276055A1Method of forming an oxygen- or nitrogen-terminated silicon nanocrystalline structure and an oxygen- or nitrogen-terminated silicon nanocrystalline structure formed by the methodNUMASAWA YOICHIRO·Filed 2003·Application pending·0 cites
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