Inventor

ANDO TAKASHI

US640 patents

⚠️ This page may combine multiple inventors who share the name “ANDO TAKASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ANDO TAKASHI

IBM

Multi-threshold voltage gate-all-around field-effect transistor devices with common gates

Gate formation scheme for nanosheet transistors having different work function metals and different nanosheet width dimensions

Stacked field-effect transistors (FETs) with shared and non-shared gates

Stacked nanosheet 4T2R unit cell for neuromorphic computing

Nanosheet with selective dipole diffusion into high-k

I/O device for gate-all-around transistors

Non-volatile analog resistive memory cells implementing ferroelectric select transistors

Multiple dielectrics for gate-all-around transistors

Full air-gap spacers for gate-all-around nanosheet field effect transistors

Vertically stacked NFETS and PFETS with gate-all-around structure

Enhanced field bipolar resistive RAM integrated with FDSOI technology

Multiple work function nanosheet field-effect transistors with differential interfacial layer thickness

High-density field-enhanced ReRAM integrated with vertical transistors

Multivalent oxide cap for analog switching resistive memory

Ferroelectric gate dielectric with scaled interfacial layer for steep sub-threshold slope field-effect transistor

Stacked planar capacitors with scaled EOT

Scaled cross bar array with undercut electrode

High-K gate dielectric and metal gate conductor stack for planar field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material

Method to improve reliability of replacement gate device

Semiconductor device having dual metal gates and method of manufacture

Resistive switching memory stack for three-dimensional structure

Gate stack formed with interrupted deposition processes and laser annealing

Gate stack formed with interrupted deposition processes and laser annealing

Stable work function for narrow-pitch devices

Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme

Scavenging metal stack for a high-k gate dielectric

ANDO TAKASHI

FinFET parasitic capacitance reduction using air gap

FinFET parasitic capacitance reduction using air gap

Multi-layer work function metal replacement gate

Low threshold voltage CMOS device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

Component suction method

Component supply apparatus

Component supply apparatus

Parts feed apparatus and parts feed method

MITSUBISHI HEAVY IND LTD

Electrostatically operated dust collector

Electric dust collecting apparatus having controlled intermittent high voltage supply

SONY CORP

Solid state imaging device, method of manufacturing the same, and imaging apparatus

External memory device

NITTA CORP

Wafer retainer and method for attaching/detaching the wafer retainer to/from polishing machine base plate

Polishing cloth and method for attaching/detaching the polishing cloth to/from polishing machine base plate

GLOBALFOUNDRIES INC

Semiconductor devices with varying threshold voltage and fabrication methods thereof

YAMAGUCHI TETSUJI

Solid-state imaging device for inhibiting dark current

SAMSUNG ELECTRONICS CO LTD

Toner cartridge and electrophotographic apparatus adopting the same

MEIJI SEIKA CO

Lipid double-chain derivative containing polyoxyethylene

NGK INSULATORS LTD

Metal-ceramic joined composite bodies

NGK INSULATORS INC

Metal-ceramic joined composite bodies and joining process therefor

KONNO AKITOYO

Power device having a specific range of distances between collector and emitter electrodes

HITACHI LTD

Electric motor

SEGA ENTERPRISES KK

Storage medium for storing animation data, image processing method using same, and storage medium storing image processing programs

MITSUI NORIN KK

Composition for strengthening acid resistancy of teeth