Inventor
GENC ALPER
US18 patents
⚠️ This page may combine multiple inventors who share the name “GENC ALPER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
PSEMI CORP
12 patentsUS10790390B2Sep 29, 2020
Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
PSEMI CORP14 citations94
US10074746B2Sep 11, 2018
Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink—harmonic wrinkle reduction
PSEMI CORP23 citations94
US10797172B2Oct 6, 2020
Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
PSEMI CORP10 citations92
US11671090B2Jun 6, 2023
Switch FET body current management devices and methods
PSEMI CORP7 citations85
US11632107B1Apr 18, 2023
Gate resistive ladder bypass for RF FET switch stack
PSEMI CORP7 citations85
US11463087B2Oct 4, 2022
Methods and devices to generate gate induced drain leakage current sink or source path for switch FETs
PSEMI CORP9 citations85
US11405035B1Aug 2, 2022
Gate resistor bypass for RF FET switch stack
PSEMI CORP9 citations85
US11011633B2May 18, 2021
Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
PSEMI CORP5 citations84
US12074217B2Aug 27, 2024
Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
PSEMI CORP2 citations73
US11923838B2Mar 5, 2024
Inductive drain and/or body ladders in RF switch stacks
PSEMI CORP2 citations73
US12176888B2Dec 24, 2024
Switch FET body current management devices and methods
PSEMI CORP1 citations62
US12119814B2Oct 15, 2024
Gate resistive ladder bypass for RF FET switch stack
PSEMI CORP1 citations62
PEREGRINE SEMICONDUCTOR CORP
4 patentsUS9786781B2Oct 10, 2017
Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
PEREGRINE SEMICONDUCTOR CORP29 citations97
US9653601B2May 16, 2017
Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
PEREGRINE SEMICONDUCTOR CORP29 citations97
US9087899B2Jul 21, 2015
Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
PEREGRINE SEMICONDUCTOR CORP44 citations94
US9461037B2Oct 4, 2016
Reduced generation of second harmonics of FETs
PEREGRINE SEMICONDUCTOR CORP3 citations72