P

Inventor

MCDAVID JAMES M

US14 patents

Patents

14 patents
US5192704AMar 9, 1993

Method and apparatus for a filament channel pass gate ferroelectric capacitor memory cell

TEXAS INSTRUMENTS INC69 citations96
US5040052AAug 13, 1991

Compact silicon module for high density integrated circuits

TEXAS INSTRUMENTS INC103 citations95
US4878100AOct 31, 1989

Triple-implanted drain in transistor made by oxide sidewall-spacer method

TEXAS INSTRUMENTS INC24 citations92
US4672419AJun 9, 1987

Metal gate, interconnect and contact system for VLSI devices

TEXAS INSTRUMENTS INC47 citations92
US4665295AMay 12, 1987

Laser make-link programming of semiconductor devices

TEXAS INSTRUMENTS INC48 citations92
US4641417AFeb 10, 1987

Process for making molybdenum gate and titanium silicide contacted MOS transistors in VLSI semiconductor devices

TEXAS INSTRUMENTS INC33 citations92
US4507853AApr 2, 1985

Metallization process for integrated circuits

TEXAS INSTRUMENTS INC50 citations92
US5136534AAug 4, 1992

Method and apparatus for a filament channel pass gate ferroelectric capacitor memory cell

TEXAS INSTRUMENTS INC20 citations82
US4628588ADec 16, 1986

Molybdenum-metal mask for definition and etch of oxide-encapsulated metal gate

TEXAS INSTRUMENTS INC20 citations81
US5144746ASep 8, 1992

Method of assembling compact silicon module for high density integrated circuits

TEXAS INSTRUMENTS INC7 citations73
US4922320AMay 1, 1990

Integrated circuit metallization with reduced electromigration

TEXAS INSTRUMENTS INC13 citations73
US4744858AMay 17, 1988

Integrated circuit metallization with reduced electromigration

TEXAS INSTRUMENTS INC13 citations73
US4874720AOct 17, 1989

Method of making a metal-gate MOS VLSI device

TEXAS INSTRUMENTS INC5 citations62
US4736233AApr 5, 1988

Interconnect and contact system for metal-gate MOS VLSI devices

TEXAS INSTRUMENTS INC4 citations62