Inventor · disambiguated record
Masataka Takebuchi
Also filed as: TAKEBUCHI MASATAKA
20 granted patents·1 pending application·415 citations·filing 1990–2011
95Inventor score
Top patents by PatentIndex Score
21 records- 0190US6417051B1Method of manufacturing memory device including insulated gate field effect transistorsTOSHIBA KK·Filed 2000·Granted Jul 9, 2002·55 cites·25 claims
- 0289US5138410ANonvolatile semiconductor memory device having tunnel insulating film structureTOSHIBA KK·Filed 1990·Granted Aug 11, 1992·80 cites·7 claims
- 0384US7023049B2Semiconductor device including nonvolatile memoryTOSHIBA KK·Filed 2003·Granted Apr 4, 2006·24 cites·9 claims
- 0481US6900086B2Semiconductor device having MISFETsTOSHIBA KK·Filed 2003·Granted May 31, 2005·25 cites·10 claims
- 0576US6376879B2Semiconductor device having MISFETsTOSHIBA KK·Filed 1999·Granted Apr 23, 2002·40 cites·41 claims
- 0676US5553016ASemiconductor memory deviceTOSHIBA KK·Filed 1993·Granted Sep 3, 1996·38 cites·10 claims
- 0775US6624468B2Semiconductor device including insulated gate field effect transistorsTOSHIBA KK·Filed 2002·Granted Sep 23, 2003·18 cites·6 claims
- 0872US5341329ANonvolatile semiconductor memory device capable of preventing read error caused by overerase state and method thereforTOSHIBA KK·Filed 1993·Granted Aug 23, 1994·33 cites·29 claims
- 0969US5532181AMethod of manufacturing semiconductor non-volatile memory device having different gate insulating thicknessesTOSHIBA KK·Filed 1994·Granted Jul 2, 1996·28 cites·10 claims
- 1068US6078074ASemiconductor device having multilayer metal interconnectionTOSHIBA KK·Filed 1997·Granted Jun 20, 2000·25 cites·12 claims
- 1165US8604522B2Field effect type semiconductor device and method for manufacturing the sameTAKEBUCHI MASATAKA·Filed 2011·Granted Dec 10, 2013·3 cites·13 claims
- 1255US7948023B2Semiconductor device including nonvolatile memory and method for fabricating the sameTOSHIBA KK·Filed 2009·Granted May 24, 2011·0 cites·13 claims
- 1352US7592667B2Semiconductor device including nonvolatile memory and method for fabricating the sameTOSHIBA KK·Filed 2007·Granted Sep 22, 2009·0 cites·4 claims
- 1452US6018195AMOS gate structure semiconductor deviceTOSHIBA KK·Filed 1997·Granted Jan 25, 2000·18 cites·2 claims
- 1549US7282413B2Semiconductor device including nonvolatile memory and method for fabricating the sameTOSHIBA KK·Filed 2005·Granted Oct 16, 2007·0 cites·8 claims
- 1648US5151761ANonvolatile semiconductor memory device with isolated gate electrodesTOSHIBA KK·Filed 1990·Granted Sep 29, 1992·13 cites·28 claims
- 1739US2002098652A1Semiconductor device having MISFETsTOSHIBA KK·Filed 2002·Application pending·0 cites
- 1837US8034695B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2008·Granted Oct 11, 2011·0 cites·13 claims
- 1937US5324972ASemiconductor non-volatile memory device and method of manufacturing the sameTOSHIBA KK·Filed 1992·Granted Jun 28, 1994·6 cites·2 claims
- 2037US5101248ASemiconductor deviceTOSHIBA KK·Filed 1991·Granted Mar 31, 1992·6 cites·4 claims
- 2128US5190894AMethod of forming a wiring layer of a semiconductor deviceTOSHIBA KK·Filed 1991·Granted Mar 2, 1993·3 cites·10 claims
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